Patent classifications
C04B41/0036
METHODS OF SURFACE FUNCTIONALIZATION OF ZIRCONIA-TOUGHENED ALUMINA WITH SILICON NITRIDE
Disclosed herein are methods for functionalizing the surface of a biomedical implant. The biomedical implant may be a zirconia-toughened alumina implant surface functionalized with silicon nitride powder for promoting osteogenesis.
METHODS OF SURFACE FUNCTIONALIZATION OF ZIRCONIA-TOUGHENED ALUMINA WITH SILICON NITRIDE
Disclosed herein are methods for functionalizing the surface of a biomedical implant. The biomedical implant may be a zirconia-toughened alumina implant surface functionalized with silicon nitride powder for promoting osteogenesis.
DIAMOND CUTTING TOOL AND METHOD FOR MANUFACTURING THE SAME
There is provided a diamond cutting tool including a cutting edge portion containing single crystal diamond or binderless polycrystalline diamond and graphite, wherein when Raman spectroscopy is performed on a surface of the cutting edge portion, a ratio R1 of Ig1 to a sum of Id1 and the Ig1 is equal to or more than 0.5 and equal to or less than 1, where the Idi represents a peak intensity of first carbon in the surface, the Ig1 represents a peak intensity of second carbon in the surface, the first carbon represents carbon that forms the single crystal diamond or the binderless polycrystalline diamond.
DIAMOND CUTTING TOOL AND METHOD FOR MANUFACTURING THE SAME
There is provided a diamond cutting tool including a cutting edge portion containing single crystal diamond or binderless polycrystalline diamond and graphite, wherein when Raman spectroscopy is performed on a surface of the cutting edge portion, a ratio R1 of Ig1 to a sum of Id1 and the Ig1 is equal to or more than 0.5 and equal to or less than 1, where the Idi represents a peak intensity of first carbon in the surface, the Ig1 represents a peak intensity of second carbon in the surface, the first carbon represents carbon that forms the single crystal diamond or the binderless polycrystalline diamond.
Method for selectively metallizing surface of ceramic substrate, ceramic product and use of ceramic product
A method for selectively metallizing a surface of a ceramic substrate, a ceramic product and use of the ceramic product are provided. The method comprises steps of: A) molding and sintering a ceramic composition to obtain the ceramic substrate, in which the ceramic composition comprises a ceramic powder and a functional powder dispersed in the ceramic powder; the ceramic powder is at least one selected from a group consisting of an oxide of E, a nitride of E, a oxynitride of E, and a carbide of E; E at least one selected from a group consisting of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, B, Al, Ga, Si, Ge, P, As, Sc, Y, Zr, Hf, is and lanthanide elements; the functional powder is at least one selected from a group consisting of an oxide of M, a nitride of M, a oxynitride of M, a carbide of M, and a simple substance of M; and M is at least one selected from a group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir, Pt, Au, In, Sn, Sb, Pb, Bi, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; B) radiating a predetermined region of the surface of the ceramic substrate using an energy beam to form a chemical plating active center on the predetermined region of the surface of the ceramic substrate; and C) performing chemical plating on the ceramic substrate formed with the chemical plating active center to form a metal layer on the predetermined region of the surface of the ceramic substrate.
Method for selectively metallizing surface of ceramic substrate, ceramic product and use of ceramic product
A method for selectively metallizing a surface of a ceramic substrate, a ceramic product and use of the ceramic product are provided. The method comprises steps of: A) molding and sintering a ceramic composition to obtain the ceramic substrate, in which the ceramic composition comprises a ceramic powder and a functional powder dispersed in the ceramic powder; the ceramic powder is at least one selected from a group consisting of an oxide of E, a nitride of E, a oxynitride of E, and a carbide of E; E at least one selected from a group consisting of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, B, Al, Ga, Si, Ge, P, As, Sc, Y, Zr, Hf, is and lanthanide elements; the functional powder is at least one selected from a group consisting of an oxide of M, a nitride of M, a oxynitride of M, a carbide of M, and a simple substance of M; and M is at least one selected from a group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir, Pt, Au, In, Sn, Sb, Pb, Bi, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; B) radiating a predetermined region of the surface of the ceramic substrate using an energy beam to form a chemical plating active center on the predetermined region of the surface of the ceramic substrate; and C) performing chemical plating on the ceramic substrate formed with the chemical plating active center to form a metal layer on the predetermined region of the surface of the ceramic substrate.
FLEXIBLE ALUMINA CERAMIC WAVEGUIDES FOR TERAHERTZ APPLICATIONS
The THz waveguides disclosed herein are used to transmit signals having a THz frequency in the range from 0.1 THz to 10 THz and include an alumina core surrounded by an optional cladding. The core may have a diameter (D1) in the range from 10 μm to 500 μm and may be comprised of a ceramic ribbon having a dielectric constant (Dk). The optional cladding may have a dielectric constant (Dk) less than the core. The THz waveguides can be formed using a continuous firing process and nano-perforation technology that enables access to a wide form factor range. In one example, rectangular waveguides, or ribbons, may be fabricated in the 10 μm to 200 μm thick range at widths in the range from sub-millimeters to several meters and lengths in the range from millimeters to several hundred meters.
Method for Producing or Modifying Silicon Carbide-Containing Articles
A method for making an article comprising silicon carbide. The method includes producing an article including silicon carbide via additive manufacturing. The method further includes heating via at least one laser beam in a site-selective and locally limited manner a surface of the article so as to cause at least one of ablation and chemical modification of the surface.
Method for Producing or Modifying Silicon Carbide-Containing Articles
A method for making an article comprising silicon carbide. The method includes producing an article including silicon carbide via additive manufacturing. The method further includes heating via at least one laser beam in a site-selective and locally limited manner a surface of the article so as to cause at least one of ablation and chemical modification of the surface.
METHOD FOR MANUFACTURING SINGLE SHEET-TYPE GREEN SHEET, METHOD FOR MANUFACTURING SILICON NITRIDE SINTERED BODY, SINGLE SHEET-TYPE GREEN SHEET, AND SILICON NITRIDE SINTERED BODY
A method for manufacturing a single sheet-type green sheet includes a transporting step of transporting a strip-shaped green sheet that contains ceramic along a longitudinal direction thereof, and an irradiation step of irradiating the transported strip-shaped green sheet with a laser beam to cut the strip-shaped green sheet, thereby obtaining a single sheet-type green sheet.