Patent classifications
C04B41/80
FLOW PATH MEMBER
In the present disclosure, a flow path member includes a substrate, a flow path and a first oxide layer. The substrate contains non-oxide ceramics, and includes an outer surface. The flow path is in the substrate, and includes an inlet and an outlet. The first oxide layer is disposed on the outer surface.
PROCESS FOR THE PREPARATION OF A STERILIZED CERAMIC BODY COMPRISING OR ESSENTIALLY CONSISTING OF STABILIZED ZIRCONIA OF A DEFINED COLOUR
A process for the preparation of a sterilized ceramic body including or essentially consisting of stabilized zirconia of a defined colour, including the steps of: providing a ceramic primary body including or essentially consisting of stabilized zirconia of a first colour A, and sterilizing the primary body using radiation sterilization whereby the primary body undergoes a colour change to a colour B. The process includes the further step of irradiating the sterilized primary body with electromagnetic radiation of at least one wavelength lying in the wavelength band ranging from 150 nm to 700 nm to induce an at least partial reversal of the colour change to obtain a colour C of the sterilized ceramic body, the colour C complying with the following requirements in the CIELAB colour space: L* being from 54 to 95, a* being from 15 to 15 and b* being from 15 to 15.
Hydrocarbon film protected refractory carbide components and use
A turbine power generation system with enhanced stabilization of refractory carbides provided by hydrocarbon from high carbon activity gases is disclosed. The disclosure also includes a method of using high carbon activity gases to stabilize hot gas path components.
Hydrocarbon film protected refractory carbide components and use
A turbine power generation system with enhanced stabilization of refractory carbides provided by hydrocarbon from high carbon activity gases is disclosed. The disclosure also includes a method of using high carbon activity gases to stabilize hot gas path components.
METHODS FOR FORMING CERAMIC CORES
Methods for forming ceramic cores are disclosed. A ceramic core formed using the method of the present application includes a silica depletion zone encapsulating an inner zone. The inner zone includes mullite and the silica depletion zone includes alumina. The method includes heat-treating a ceramic body in a non-oxidizing atmospheric condition for an effective temperature and time combination at a pressure less than 10 atmosphere to form the silica depletion zone at a surface of the ceramic core.
ADSORPTION MEMBER AND METHOD FOR PRODUCING SAME
An adsorption member of the present disclosure includes a substrate made of ceramic containing silicon carbide as a main component; and a plurality of protrusions formed on a surface of the substrate. Each of the plurality of protrusions includes a placement portion having a placement surface for placing a to-be-treated object and a support portion supporting the placement portion. The placement portion includes a film containing at least one type selected from the group consisting of silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium, and tantalum as a main component. The films are independent of one another for each of the plurality of protrusions.
Sputtering target and manufacturing method thereof, and transistor
One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1?10.sup.16 atoms/cm.sup.3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H.sub.2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.
Sputtering target and manufacturing method thereof, and transistor
One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1?10.sup.16 atoms/cm.sup.3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H.sub.2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.
Press for producing pellets from powdered material
The invention relates to a press for producing pellets from powdered material comprising at least one die with a mold cavity imaging the pellet, at least one upper punch and at least one lower punch that interact with the mold cavity to form the pellet, and at least one electric drive for driving the upper punch, and/or the lower punch, and/or the die along a main press axis, wherein the press also comprises at least one movable element acting on the die and/or the mold cavity of the die, wherein at least one electro-hydrostatic drive is provided to drive the at least one movable element.
Press for producing pellets from powdered material
The invention relates to a press for producing pellets from powdered material comprising at least one die with a mold cavity imaging the pellet, at least one upper punch and at least one lower punch that interact with the mold cavity to form the pellet, and at least one electric drive for driving the upper punch, and/or the lower punch, and/or the die along a main press axis, wherein the press also comprises at least one movable element acting on the die and/or the mold cavity of the die, wherein at least one electro-hydrostatic drive is provided to drive the at least one movable element.