C04B41/80

ULTRA-HIGH DIELECTRIC CONSTANT GARNET
20210317044 · 2021-10-14 ·

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

ULTRA-HIGH DIELECTRIC CONSTANT GARNET
20210317044 · 2021-10-14 ·

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

Process for the preparation of a sterilized ceramic body comprising or essentially consisting of stabilized zirconia of a defined colour

A process for the preparation of a sterilized ceramic body including or essentially consisting of stabilized zirconia of a defined colour, including the steps of: providing a ceramic primary body including or essentially consisting of stabilized zirconia of a first colour A, and sterilizing the primary body using radiation sterilization whereby the primary body undergoes a colour change to a colour B. The process includes the further step of irradiating the sterilized primary body with electromagnetic radiation of at least one wavelength lying in the wavelength band ranging from 150 nm to 700 nm to induce an at least partial reversal of the colour change to obtain a colour C of the sterilized ceramic body, the colour C complying with the following requirements in the CIELAB colour space: L* being from 54 to 95, a* being from −15 to 15 and b* being from −15 to 15.

Process for the preparation of a sterilized ceramic body comprising or essentially consisting of stabilized zirconia of a defined colour

A process for the preparation of a sterilized ceramic body including or essentially consisting of stabilized zirconia of a defined colour, including the steps of: providing a ceramic primary body including or essentially consisting of stabilized zirconia of a first colour A, and sterilizing the primary body using radiation sterilization whereby the primary body undergoes a colour change to a colour B. The process includes the further step of irradiating the sterilized primary body with electromagnetic radiation of at least one wavelength lying in the wavelength band ranging from 150 nm to 700 nm to induce an at least partial reversal of the colour change to obtain a colour C of the sterilized ceramic body, the colour C complying with the following requirements in the CIELAB colour space: L* being from 54 to 95, a* being from −15 to 15 and b* being from −15 to 15.

PROCESS FOR MARKING A REFRACTORY CERAMIC PART
20210300830 · 2021-09-30 ·

A process for marking a surface of a refractory ceramic part, known as the “surface to be marked.” The part has a microstructure of grains including more than 50% by mass of ZrO.sub.2, bound by a silicate binder phase, and a total porosity of less than 5% by volume. The process involves irradiation of the surface with a laser beam. The beam is emitted by a laser device set to comply with relationship: a.V.sup.2+b.F.sup.2+c.VF+d.V+e.F+f<0, in which: a=10.sup.4.D+2×10.sup.6, b=0.5×10.sup.6.D−150×10.sup.6, c=0.5×10.sup.6.D−300×10.sup.6, d=5×10.sup.3.D−2.5×10.sup.6, e=−5×10.sup.3.D+2.0×10.sup.6, and f=−5×10.sup.9.D+1.8×10.sup.12. V is expressed in mm/second, D is expressed in mm and F is expressed in kHz.

PROCESS FOR MARKING A REFRACTORY CERAMIC PART
20210300830 · 2021-09-30 ·

A process for marking a surface of a refractory ceramic part, known as the “surface to be marked.” The part has a microstructure of grains including more than 50% by mass of ZrO.sub.2, bound by a silicate binder phase, and a total porosity of less than 5% by volume. The process involves irradiation of the surface with a laser beam. The beam is emitted by a laser device set to comply with relationship: a.V.sup.2+b.F.sup.2+c.VF+d.V+e.F+f<0, in which: a=10.sup.4.D+2×10.sup.6, b=0.5×10.sup.6.D−150×10.sup.6, c=0.5×10.sup.6.D−300×10.sup.6, d=5×10.sup.3.D−2.5×10.sup.6, e=−5×10.sup.3.D+2.0×10.sup.6, and f=−5×10.sup.9.D+1.8×10.sup.12. V is expressed in mm/second, D is expressed in mm and F is expressed in kHz.

PROTECTIVE LAYER FOR A REFRACTORY PRODUCT

A process for treating a fused refractory product including more than 10% by mass of ZrO.sub.2, or “base product.” The process includes heating at least a portion of the surface of the product, so as to melt ZrO.sub.2 crystals in a superficial region extending to a depth of less than 2000 μm. The process includes cooling the molten superficial region obtained in the preceding step so as to obtain a protective layer.

Ultra-high dielectric constant garnet

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

Ultra-high dielectric constant garnet

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
20210017029 · 2021-01-21 ·

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.