An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C

A method of joining is provided. the method includes preparing a first member, preparing a second member, and forming at least one trench in at least one of the first member and the second member. The method further includes placing a strip of solid aluminum material between the first member and the second member across the trench, bringing the first member and the second member together to contact the solid aluminum material and to form an assembly, and applying a force and heat to the assembly above a melting point of the solid aluminum material such that the solid aluminum material flows into the trench. Additionally, the method further includes applying additional heat to the assembly at or above a wetting temperature of the member in which the trench is formed to bond the first member to the second member along adjacent faces and cooling the assembly.

An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C. to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C. to 750 C.

This patent document relates to systems, structures, devices, and fabrication processes for ceramic matrix composites suitable for use in a nuclear reactor environment and other applications requiring materials that can withstand high temperatures and/or highly corrosive environments. In one exemplary aspect, a method of joining and sealing ceramic structures is disclosed. The method comprises forming a joint of a ceramic structure and an end plug using a sealing material, wherein the end plug has a hole that goes through a top surface and a bottom surface of the end plug; filling the ceramic structure with a desired gas composition through the hole; heating a material into a molten form using a heat source; and directing the material into the hole, wherein the material solidifies to seal the end plug.

A ceramic circuit substrate according to the present invention includes a ceramic substrate, a copper circuit made of a copper-based material bonded, via a bonding layer, to a surface of the ceramic, and a copper heat sink made of the copper-based material bonded, via a bonding layer, to the other surface of the ceramic. The bonding layers each include a brazing material component including two or more kinds of metals, such as Ag, and an active metal having a predetermined concentration. The bonding layers each include a brazing material layer including the brazing material component, and an active metal compound layer containing the active metal. A ratio of a bonding area of the active metal compound layer in a bonding area of each of the bonding layers is 88% or more.

An assembly includes a first member, a second member adjacent to the first member, and an aluminum material. At least one of the first member and the second member defines at least one trench. The aluminum material is disposed within the trench and bonds the first member to the second member along adjacent faces. In one form, a spacing between the first member and the second member along the adjacent faces is less than 5 m.

A ceramic circuit substrate according to the present invention includes a ceramic substrate, a copper circuit made of a copper-based material bonded, via a bonding layer, to a surface of the ceramic, and a copper heat sink made of the copper-based material bonded, via a bonding layer, to the other surface of the ceramic. The bonding layers each include a brazing material component including two or more kinds of metals, such as Ag, and an active metal having a predetermined concentration. The bonding layers each include a brazing material layer including the brazing material component, and an active metal compound layer containing the active metal. A ratio of a bonding area of the active metal compound layer in a bonding area of each of the bonding layers is 88% or more.

In a copper-ceramic bonded body of the present invention, at a bonding interface of a copper member and a ceramic member, there are formed a nitride compound layer containing one or more nitride forming elements selected from Ti, Nb, Hf, and Zr, and an AgCu eutectic layer, in order from the ceramic member side, the thickness of the nitride compound layer is 0.15 m or more and 1.0 m or less, an intermetallic compound phase formed of an intermetallic compound that contains the nitride forming element and Si is present between the copper member and the ceramic member, and Cu and Si are present at the grain boundary of the nitride compound layer.

A joining method includes placing a brazing element between an interface area of a first ceramic piece and an interface area of a second ceramic piece to create a joining pre-assembly and placing the components of said joining pre-assembly into a process chamber. Oxygen is removed from said process chamber and at least said brazing element of said joining pre-assembly is heated, thereby hermetically joining said first ceramic piece to said second ceramic piece. Said brazing element consists of Cobalt and Carbon.

A copper/ceramic bonded body is provided, including: a copper member made of copper or a copper alloy; and a ceramic member, the copper member and the ceramic member being bonded to each other, in which a total concentration of Al, Si, Zn, and Mn is 3 atom % or less when concentration measurement is performed by an energy dispersive X-ray analysis method at a position 1000 nm away from a bonded interface between the copper member and the ceramic member to a copper member side, assuming that a total value of Cu, Mg, Ti, Zr, Nb, Hf, Al, Si, Zn, and Mn is 100 atom %.