The present disclosure provides a method for producing a reaction gas containing R-1132(E) with selectivity higher than that of known methods. Specifically, the present disclosure provides a method for producing a reaction gas containing (E)-1,2-difluoroethylene (R-1132(E)), (1) the method comprising a step of subjecting a starting material gas containing one or more fluoromethanes selected from the group consisting of chlorodifluoromethane (R-22), difluoromethane (R-32), and fluoromethane (R-41) to a reaction that involves thermal decomposition to obtain the reaction gas, and (2) the starting material gas having a water vapor content of 1 volume % or less.

A device and a process to propagate molecular growth of hydrocarbons, either straight or branched chain structures, that naturally occur in the gas phase of a first gas to gas phase molecules of a second gas having higher molecular chain lengths than the hydrocarbons of the first gas. According to one embodiment, the device includes a grounded reactor vessel having a gas inlet, a product outlet, and an electrode within the vessel; a power supply coupled to the electrode for creating an electrostatic field within the vessel for converting the first gas to a second gas.

A device and a process to propagate molecular growth of hydrocarbons, either straight or branched chain structures, that naturally occur in the gas phase of a first gas to gas phase molecules of a second gas having higher molecular chain lengths than the hydrocarbons of the first gas. According to one embodiment, the device includes a grounded reactor vessel having a gas inlet, a product outlet, and an electrode within the vessel; a power supply coupled to the electrode for creating an electrostatic field within the vessel for converting the first gas to a second gas.

The invention includes methods for removing higher acetylenes from a gaseous stream that includes a hydrogen fraction and a non-hydrogen fraction, wherein the gaseous stream includes less than about 4% in total of diacetylene and vinylacetylene, where the method includes the following steps: (i) an adsorption that passes the gaseous stream at a preselected superficial linear gas velocity across an adsorption bed supported within an enclosure, the adsorption bed containing a crystalline porous ceramic adsorbent to adsorb the higher acetylenes onto the adsorbent, thereby producing a saturated adsorption bed and a purified gaseous stream including less than about 25 ppm of diacetylene that regenerates the saturated adsorbent bed by passing a regeneration gas across the saturated adsorption bed to desorb the higher acetylenes retained thereupon, thereby producing a regenerated adsorbent bed and a contaminated gas stream bearing the higher acetylenes; and (iii) a purging step that removes the contaminated gas stream from the enclosure. The invention also includes systems for removing diacetylene and vinylacetylene from a hydrogen-dominant acetylene-hydrogen gaseous stream.

The invention includes methods for removing higher acetylenes from a gaseous stream that includes a hydrogen fraction and a non-hydrogen fraction, wherein the gaseous stream includes less than about 4% in total of diacetylene and vinylacetylene, where the method includes the following steps: (i) an adsorption that passes the gaseous stream at a preselected superficial linear gas velocity across an adsorption bed supported within an enclosure, the adsorption bed containing a crystalline porous ceramic adsorbent to adsorb the higher acetylenes onto the adsorbent, thereby producing a saturated adsorption bed and a purified gaseous stream including less than about 25 ppm of diacetylene that regenerates the saturated adsorbent bed by passing a regeneration gas across the saturated adsorption bed to desorb the higher acetylenes retained thereupon, thereby producing a regenerated adsorbent bed and a contaminated gas stream bearing the higher acetylenes; and (iii) a purging step that removes the contaminated gas stream from the enclosure. The invention also includes systems for removing diacetylene and vinylacetylene from a hydrogen-dominant acetylene-hydrogen gaseous stream.

A method for the adsorption separation of propylene and propyne, comprising selectively adsorbing propyne from a mixed gas of propylene and propyne using an anion-containing metal-organic framework material as an adsorbing agent so as to obtain a purified propylene gas. The anion-containing metal-organic framework material is used as an adsorbing agent in the method, and the adsorbing agent is a kind of highly ordered microporous organic-inorganic hybrid material, with the pore size thereof being adjustable within the range of 0.4-1.2 nm, and the pore volume thereof being adjustable within the range of 0.1-1.2 cm3/g. A large number of anionic active sites and a highly ordered spatial arrangement thereof allow the adsorbing agent to exhibit excellent propyne adsorption properties. Thus, the adsorbing agent has a very high propyne selectivity and adsorption volume.

A method for the adsorption separation of propylene and propyne, comprising selectively adsorbing propyne from a mixed gas of propylene and propyne using an anion-containing metal-organic framework material as an adsorbing agent so as to obtain a purified propylene gas. The anion-containing metal-organic framework material is used as an adsorbing agent in the method, and the adsorbing agent is a kind of highly ordered microporous organic-inorganic hybrid material, with the pore size thereof being adjustable within the range of 0.4-1.2 nm, and the pore volume thereof being adjustable within the range of 0.1-1.2 cm3/g. A large number of anionic active sites and a highly ordered spatial arrangement thereof allow the adsorbing agent to exhibit excellent propyne adsorption properties. Thus, the adsorbing agent has a very high propyne selectivity and adsorption volume.

Described herein are the depositions of conductive metallic films on a surface which contains topography. The deposition uses a metallic precursor comprises a neutral (uncharged) metal compound in which the metal atom is in the zerovalent state and stabilized by ligands which are stable as uncharged, volatile species.

Described herein are the depositions of conductive metallic films on a surface which contains topography. The deposition uses a metallic precursor comprises a neutral (uncharged) metal compound in which the metal atom is in the zerovalent state and stabilized by ligands which are stable as uncharged, volatile species.

This invention is directed to novel mixed transition metal iron (II/III) catalysts for the extraction of oxygen from CO.sub.2 and the selective reaction with organic compounds.