An object of the present disclosure is to provide a method for producing an organic compound, and a composition. The object is achieved by a method for producing a compound represented by formula (1): ##STR00001## wherein X represents O, an optionally substituted imino group, or S, R.sup.1 represents a hydrogen atom or a hydrocarbyl group optionally having at least one substituent, and R.sup.2 represents a hydrogen atom or a monovalent organic group, or R.sup.1 and R.sup.2, together with X and one carbon atom respectively adjacent to R.sup.1 and R.sup.2, may form a heterocyclic ring optionally having at least one substituent, R.sup.3 represents a hydrogen atom or a monovalent organic group, and R.sup.4 represents CF.sub.2CH.sub.3 or CH.sub.2CHF.sub.2; the method including step A of reacting a compound represented by formula (2): ##STR00002## wherein the alphabetical symbols are as defined above, with vinylidene fluoride under light irradiation.

Disclosed is a method of treating thin films, the method comprising: supplying a capping precursor to the inside of a chamber where a substrate is placed to adsorb the capping precursor onto a thin film formed on the substrate; purging the inside of the chamber; supplying a first reaction material to the inside of the chamber to form a stressor layer; purging the inside of the chamber; annealing the substrate; supplying an etch initiator to the inside of the chamber; purging the inside of the chamber; supplying a second reaction material to the inside of the chamber to activate the etch initiator, and purging the inside of the chamber.

Disclosed is a method of treating thin films, the method comprising: supplying a capping precursor to the inside of a chamber where a substrate is placed to adsorb the capping precursor onto a thin film formed on the substrate; purging the inside of the chamber; supplying a first reaction material to the inside of the chamber to form a stressor layer; purging the inside of the chamber; annealing the substrate; supplying an etch initiator to the inside of the chamber; purging the inside of the chamber; supplying a second reaction material to the inside of the chamber to activate the etch initiator, and purging the inside of the chamber.