A process can be used for preparing aldehydes from C2 to C20 olefins with a subsequent thermal separation for removal of the aldehyde formed. The process involves a membrane separation, which is preceded by performance of a gas exchange by which the proportion of the partial pressure represented by carbon monoxide or hydrogen is increased in order to reduce catalyst losses.

Disclosed are a high-entropy nitride ceramic fiber, and a preparation method and use thereof. The high-entropy ceramic fiber comprises Ti, Hf, Ta, Nb, and Mo; the high-entropy nitride ceramic fiber presents single crystal phase, and each of the elements are uniformly distributed at molecular level. The preparation method of the high-entropy ceramic fiber comprises: mixing a high-entropy ceramic precursor comprising the target metal elements, a spinning aid, and a solvent uniformly to prepare a precursor spinning solution, followed by working procedures of spinning, pyrolyzation, and nitriding to prepare the high-entropy nitride ceramic fiber. The high-entropy nitride ceramic fiber can be used in photocatalysis process of carbon dioxide to prepare methane.

Disclosed are a high-entropy nitride ceramic fiber, and a preparation method and use thereof. The high-entropy ceramic fiber comprises Ti, Hf, Ta, Nb, and Mo; the high-entropy nitride ceramic fiber presents single crystal phase, and each of the elements are uniformly distributed at molecular level. The preparation method of the high-entropy ceramic fiber comprises: mixing a high-entropy ceramic precursor comprising the target metal elements, a spinning aid, and a solvent uniformly to prepare a precursor spinning solution, followed by working procedures of spinning, pyrolyzation, and nitriding to prepare the high-entropy nitride ceramic fiber. The high-entropy nitride ceramic fiber can be used in photocatalysis process of carbon dioxide to prepare methane.

The present invention provides a thin-film forming raw material including a scandium compound represented by the following general formula (1), a method of producing a thin-film including using the thin-film forming raw material, and a novel scandium compound:

##STR00001##

where R.sup.1 represents an alkyl group having 1 to 4 carbon atoms, R.sup.2 represents an alkyl group having 2 or 3 carbon atoms, and R.sup.3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.

The present invention provides a thin-film forming raw material including a scandium compound represented by the following general formula (1), a method of producing a thin-film including using the thin-film forming raw material, and a novel scandium compound:

##STR00001##

where R.sup.1 represents an alkyl group having 1 to 4 carbon atoms, R.sup.2 represents an alkyl group having 2 or 3 carbon atoms, and R.sup.3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.

A process can be used for preparing aldehydes from C2 to C20 olefins with a subsequent thermal separation for removal of the aldehyde formed. The process involves a membrane separation, which is preceded by performance of a gas exchange by which the proportion of the partial pressure represented by carbon monoxide or hydrogen is increased in order to reduce catalyst losses.

A process can be used for preparing aldehydes from C2 to C20 olefins with a subsequent thermal separation for removal of the aldehyde formed. The process involves a membrane separation, which is preceded by performance of a gas exchange by which the proportion of the partial pressure represented by carbon monoxide or hydrogen is increased in order to reduce catalyst losses.

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.