Patent classifications
C07C49/92
POLYMER COMPLEX AND PRODUCTION PROCESS THEREFOR
Provided is an organic ligand capable of providing a complex that has a three-dimensional network structure due to rare-earth element ions. Also provided is a coordination polymer which includes this organic ligand, has a new function, and contains rare-earth element ions. Additionally, a process for producing the coordination polymer and a use of the coordination polymer are provided. In particular, provided is a coordination polymer having repeating units of formula (10):
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wherein each of the variable groups is as defined in the specification.
Method for manufacturing iridium complex
A method for manufacturing tris(-diketonato)iridium by reacting -diketone with an iridium compound, in which an activation treatment including (a) an alkali treatment and (b) an acid treatment described below is applied to the iridium compound to activate the iridium compound, and to subsequently react the -diketone, (a) an alkali treatment: a treatment of adding alkali to a solution of the iridium compound to raise pH of the solution to a more alkaline side than that before the alkali addition and to not less than 10, and (b) an acid treatment: a treatment of adding acid to the solution subjected to the alkali treatment to lower pH of the solution to a more acidic side than that before the acid addition and to make the pH difference between solutions before and after the acid addition be not less than 0.1 and not more than 10. The present invention allows manufacture of tris(-diketonato)iridium utilizing a wide variety of -diketones.
Method for manufacturing iridium complex
A method for manufacturing tris(-diketonato)iridium by reacting -diketone with an iridium compound, in which an activation treatment including (a) an alkali treatment and (b) an acid treatment described below is applied to the iridium compound to activate the iridium compound, and to subsequently react the -diketone, (a) an alkali treatment: a treatment of adding alkali to a solution of the iridium compound to raise pH of the solution to a more alkaline side than that before the alkali addition and to not less than 10, and (b) an acid treatment: a treatment of adding acid to the solution subjected to the alkali treatment to lower pH of the solution to a more acidic side than that before the acid addition and to make the pH difference between solutions before and after the acid addition be not less than 0.1 and not more than 10. The present invention allows manufacture of tris(-diketonato)iridium utilizing a wide variety of -diketones.
SYNTHESIS AND USE OF PRECURSORS FOR VAPOR DEPOSITION OF TUNGSTEN CONTAINING THIN FILMS
Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
SYNTHESIS AND USE OF PRECURSORS FOR VAPOR DEPOSITION OF TUNGSTEN CONTAINING THIN FILMS
Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
SYNTHESIS AND USE OF PRECURSORS FOR VAPOR DEPOSITION OF TUNGSTEN CONTAINING THIN FILMS
Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
Metal Complex, Semiconductor Layer Comprising a Metal Complex and Organic Electronic Device
The present invention relates to a metal complex, a semiconductor layer comprising the metal complex and an organic electronic device comprising at least one metal complex thereof.
Compound, Semiconductor Layer Comprising Compound and Organic Electronic Device
The present invention relates to a compound represented by Formula (I) wherein M is Cu, Zn, Al, Hf; or Formula (V).
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Bulky ligands and metal compounds comprising bulky ligands
This disclosure provides, molecular metal catalysts supported by sterically bulky -diketonate (acac) ligands. Disclosed herein are bulky -diketonate ligands, methods of making bulky -diketonate ligands, and methods of making metal catalysts supported by sterically bulky -diketonate (acac) ligands.
A Ce(IV) Metal Complex, an Organic Electronic Device Comprising an Anode Layer, a Cathode Layer and a Charge Generation Layer, Wherein the Charge Generation Layer Comprises a P-Type Charge Generation Layer That Comprises the Ce(IV) Metal Complex and a N-Type Charge Generation Layer
The present invention is directed to an organic electronic device comprising an anode layer, a cathode layer and a charge generation layer, wherein the charge generation layer comprises a p-type charge generation layer and a n-type charge generation layer, wherein the n-type charge generation layer comprising an organic electron transport compound and a metal dopant, wherein the metal dopant is selected from a metal with an electronegativity of 1.4 eV by Pauling scale; the p-type charge generation layer comprising an organic hole transport compound and a Ce(IV) metal complex, and wherein the Ce(IV) metal complex comprises at least one anionic ligand L.