Patent classifications
C07C381/12
Photoresist composition, coated substrate including the photoresist composition, and method of forming electronic device
A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): ##STR00001##
wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.
Photoresist composition, coated substrate including the photoresist composition, and method of forming electronic device
A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): ##STR00001##
wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.
Salt, quencher, resist composition and method for producing resist pattern, and method for producing salt
Disclosed are a salt represented by formula (I), and a method for producing the salt, and a quencher and a resist composition comprising the same: ##STR00001## wherein R.sup.1 and R.sup.2 each represent a hydrocarbon group, and —CH.sub.2— included in the hydrocarbon group may be replaced by —O— or —CO—; R.sup.3, R.sup.4 and R.sup.5 each represent a halogen atom, an alkyl fluoride group or a hydrocarbon group, and —CH.sub.2— included in the hydrocarbon group may be replaced by —O— or —CO—; m3 represents an integer of 0 to 2, and when m3 is 2, two R.sup.3 may be the same or different from each other; and m4 and m5 represent an integer of 0 to 5, and when m4 and/or m5 is/are 2 or more, a plurality of R.sup.4 and/or a plurality of R.sup.5 may be the same or different from each other.
Salt, quencher, resist composition and method for producing resist pattern, and method for producing salt
Disclosed are a salt represented by formula (I), and a method for producing the salt, and a quencher and a resist composition comprising the same: ##STR00001## wherein R.sup.1 and R.sup.2 each represent a hydrocarbon group, and —CH.sub.2— included in the hydrocarbon group may be replaced by —O— or —CO—; R.sup.3, R.sup.4 and R.sup.5 each represent a halogen atom, an alkyl fluoride group or a hydrocarbon group, and —CH.sub.2— included in the hydrocarbon group may be replaced by —O— or —CO—; m3 represents an integer of 0 to 2, and when m3 is 2, two R.sup.3 may be the same or different from each other; and m4 and m5 represent an integer of 0 to 5, and when m4 and/or m5 is/are 2 or more, a plurality of R.sup.4 and/or a plurality of R.sup.5 may be the same or different from each other.
Resist composition and patterning process
A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W.sub.1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W.sub.2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M.sup.+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source. ##STR00001##
Resist composition and patterning process
A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W.sub.1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W.sub.2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M.sup.+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source. ##STR00001##
Photoacid generator, photoresist composition including the same, and method of preparing the photoacid generator
Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1: ##STR00001##
wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.
Photoacid generator, photoresist composition including the same, and method of preparing the photoacid generator
Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1: ##STR00001##
wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.
Improved Transparency in Negative Epoxy Photoresist
Disclosed herein is a photosensitive composition comprising an epoxy resin, a photoacid generator, and an antioxidant. The disclosed composition is useful for producing relief images having reduced yellowing or other discoloration due to thermal oxidation.
Improved Transparency in Negative Epoxy Photoresist
Disclosed herein is a photosensitive composition comprising an epoxy resin, a photoacid generator, and an antioxidant. The disclosed composition is useful for producing relief images having reduced yellowing or other discoloration due to thermal oxidation.