Patent classifications
C07D339/08
Compositions and methods for treating CNS disorders
Provided herein is a compound of Formula (I-I), or a pharmaceutically acceptable salt thereof, wherein the variables are defined herein. Also provided herein are pharmaceutical compositions comprising a compound of Formula (I-I), and methods of using the compounds, e.g. in the treatment of CNS-related disorders. ##STR00001##
ORGANIC ELECTRONIC ELEMENT CONTAINING COMPOUND FOR ORGANIC ELECTRONIC ELEMENT, AND ELECTRONIC DEVICE THEREFOR
Provides is an organic electronic element comprising an anode, a cathode, and an organic material layer between the anode and the cathode; and an electronic device comprising the organic electronic element, wherein the organic material layer comprises compounds represented by Formula 1 and Formula 2, respectively, and thus can lower the driving voltage of the organic electronic element and improve the luminosity and lifespan thereof.
ORGANIC ELECTRONIC ELEMENT CONTAINING COMPOUND FOR ORGANIC ELECTRONIC ELEMENT, AND ELECTRONIC DEVICE THEREFOR
Provides is an organic electronic element comprising an anode, a cathode, and an organic material layer between the anode and the cathode; and an electronic device comprising the organic electronic element, wherein the organic material layer comprises compounds represented by Formula 1 and Formula 2, respectively, and thus can lower the driving voltage of the organic electronic element and improve the luminosity and lifespan thereof.
Acyloxy substituted phenyl dithiane derivatives
Para-acyl substituted diazacyclohexenes, medical formulations thereof and methods for making and using the same.
Acyloxy substituted phenyl dithiane derivatives
Para-acyl substituted diazacyclohexenes, medical formulations thereof and methods for making and using the same.
Resist composition, method of forming resist pattern, compound, and acid generator
A resist composition containing a compound represented by the general formula (bd1-1), (bd1-2) or (bd1-3); in the formula, Rx.sup.1 to Rx.sup.4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure; Ry.sup.1 to Ry.sup.2 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, Rz.sup.1 to Rz.sup.4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure. At least one of Rx.sup.1 to Rx.sup.4, Ry.sup.1 to Ry.sup.2 and Rz.sup.1 to Rz.sup.4 has an anion group, M.sub.1.sup.m+ represents a sulfonium cation having a sulfonyl group, R.sup.001 to R.sup.003 each independently represent a monovalent organic group; provided that at least one of R.sup.001 to R.sup.003 is an organic group having an acid dissociable group; and M.sub.3.sup.m+ represents an m-valent organic cation having an electron-withdrawing group. ##STR00001##
Resist composition, method of forming resist pattern, compound, and acid generator
A resist composition containing a compound represented by the general formula (bd1-1), (bd1-2) or (bd1-3); in the formula, Rx.sup.1 to Rx.sup.4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure; Ry.sup.1 to Ry.sup.2 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, Rz.sup.1 to Rz.sup.4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure. At least one of Rx.sup.1 to Rx.sup.4, Ry.sup.1 to Ry.sup.2 and Rz.sup.1 to Rz.sup.4 has an anion group, M.sub.1.sup.m+ represents a sulfonium cation having a sulfonyl group, R.sup.001 to R.sup.003 each independently represent a monovalent organic group; provided that at least one of R.sup.001 to R.sup.003 is an organic group having an acid dissociable group; and M.sub.3.sup.m+ represents an m-valent organic cation having an electron-withdrawing group. ##STR00001##
REAGENTS AND PROCESS FOR DIRECT C-H FUNCTIONALIZATION
The present invention refers to a process for direct C—H functionalization, the reagents used in the process and the use thereof for the direct C—H functionalization as well as the so-obtained products.
REAGENTS AND PROCESS FOR DIRECT C-H FUNCTIONALIZATION
The present invention refers to a process for direct C—H functionalization, the reagents used in the process and the use thereof for the direct C—H functionalization as well as the so-obtained products.
Sulfonium compound, resist composition, and patterning process
A resist composition comprising a sulfonium compound of specific structure as PAG has excellent lithography performance factors such as minimal defects, high sensitivity, improved LWR and CDU, and is a quite effective resist material for precise micropatterning.