The present invention relates to compound represented by Formula (I) wherein M is a metal; L is a charge-neutral ligand, which coordinates to the metal M; n is an integer selected from 1 to 4, which corresponds to the oxidation number of M; m is an integer selected from 0 to 2; R1, R2 and R3 are substituents, wherein at least one R1, R2 and/or R3 is selected from a substituted C2 to C24 heteroaryl group, wherein at least one substituent is selected from halogen, F, Cl, CN, partially or fully fluorinated C1 to C6 alkyl, partially or fully fluorinated C1 to C6 alkoxy. The present invention also relates to a semiconductor material comprising at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) and an electronic device comprising at least one compound of formula (I). Exemplary compounds are e.g. metal complexes of 3-(2,3,5-trifluoro-6-(trifluoromethyl)pyridin-4-yl)pentane-2,4-dione, such as e.g. tris(((Z)-4-oxo-3-(2,3,5-trifluoro-6-(trifluoromethyl)pyridin-4-yl)pent-2-en-2-yl)oxy)iron and bis(((Z)-4-oxo-3-(2,3,5-trifluoro-6-(trifluoromethyl)pyridin-4-yl)pent-2-en-2-yl)oxy)copper.

##STR00001##

The present invention relates to compound represented by Formula (I) wherein M is a metal; L is a charge-neutral ligand, which coordinates to the metal M; n is an integer selected from 1 to 4, which corresponds to the oxidation number of M; m is an integer selected from 0 to 2; R1, R2 and R3 are substituents, wherein at least one R1, R2 and/or R3 is selected from a substituted C2 to C24 heteroaryl group, wherein at least one substituent is selected from halogen, F, Cl, CN, partially or fully fluorinated C1 to C6 alkyl, partially or fully fluorinated C1 to C6 alkoxy. The present invention also relates to a semiconductor material comprising at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) and an electronic device comprising at least one compound of formula (I). Exemplary compounds are e.g. metal complexes of 3-(2,3,5-trifluoro-6-(trifluoromethyl)pyridin-4-yl)pentane-2,4-dione, such as e.g. tris(((Z)-4-oxo-3-(2,3,5-trifluoro-6-(trifluoromethyl)pyridin-4-yl)pent-2-en-2-yl)oxy)iron and bis(((Z)-4-oxo-3-(2,3,5-trifluoro-6-(trifluoromethyl)pyridin-4-yl)pent-2-en-2-yl)oxy)copper.

##STR00001##

The present invention relates to a compound of Formula (I) wherein M is a metal; L is a charge-neutral ligand, which coordinates to the metal M; n is an integer selected from 1 to 4, which corresponds to the oxidation number of M; m is an integer selected from 0 to 2; R1, R2 and R3 are substituents, wherein at least one R1, R2 and/or R3 is selected from a substituted C6 to C24 aryl group, wherein at least one substituent of the substituted C6 to C24 aryl group is selected from CN or partially or fully fluorinated C1 to C12 alkyl. The present invention also relates to a semiconductor material comprising at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) and an electronic device comprising at least one compound of formula (I). Exemplary compounds are e.g. metal complexes of 4-(2,4-dioxopent-3-yl)-2,3,5,6-tetrafluorobenzonitrile, such as e.g. Fe, Al and Cu complexes thereof.

##STR00001##

The present invention relates to a compound of Formula (I) wherein M is a metal; L is a charge-neutral ligand, which coordinates to the metal M; n is an integer selected from 1 to 4, which corresponds to the oxidation number of M; m is an integer selected from 0 to 2; R1, R2 and R3 are substituents, wherein at least one R1, R2 and/or R3 is selected from a substituted C6 to C24 aryl group, wherein at least one substituent of the substituted C6 to C24 aryl group is selected from CN or partially or fully fluorinated C1 to C12 alkyl. The present invention also relates to a semiconductor material comprising at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) and an electronic device comprising at least one compound of formula (I). Exemplary compounds are e.g. metal complexes of 4-(2,4-dioxopent-3-yl)-2,3,5,6-tetrafluorobenzonitrile, such as e.g. Fe, Al and Cu complexes thereof.

##STR00001##

Triboluminescent materials that generate emission of light in response to mechanical stimulus attract significant attention due to their applications in development of “smart materials” and damage sensors. Among metal complexes, rare-earth europium and terbium complexes are most widely used, while there is no systematic data on triboluminescence in more readily available and inexpensive Cu complexes, with only a few scattered examples reported in the literature. We report a new family of photoluminescent Cu—NHC complexes that show bright triboluminescence (TL) in crystal state visible even in ambient light under air upon grinding or crushing the crystalline sample. Moreover, when these complexes are dispersed into amorphous polymethylmethacrylate (PMMA) films even at small concentrations, TL is easily observed. In Cu-containing polymer films, surrounding gas discharge is likely involved in excitation of brightly luminescent Cu—NHC complexes. Observation of TL in polymer films overcomes limitations of using crystalline phase for mechanoresponse and opens up possibilities for development of mechanoresponsive coatings and materials based on inexpensive metals such as Cu.

Triboluminescent materials that generate emission of light in response to mechanical stimulus attract significant attention due to their applications in development of “smart materials” and damage sensors. Among metal complexes, rare-earth europium and terbium complexes are most widely used, while there is no systematic data on triboluminescence in more readily available and inexpensive Cu complexes, with only a few scattered examples reported in the literature. We report a new family of photoluminescent Cu—NHC complexes that show bright triboluminescence (TL) in crystal state visible even in ambient light under air upon grinding or crushing the crystalline sample. Moreover, when these complexes are dispersed into amorphous polymethylmethacrylate (PMMA) films even at small concentrations, TL is easily observed. In Cu-containing polymer films, surrounding gas discharge is likely involved in excitation of brightly luminescent Cu—NHC complexes. Observation of TL in polymer films overcomes limitations of using crystalline phase for mechanoresponse and opens up possibilities for development of mechanoresponsive coatings and materials based on inexpensive metals such as Cu.

A pyrazole metal complex for absorption of carbon dioxide, a method for preparing the pyrazole metal complex, and a method for absorbing carbon dioxide are provided; wherein the product produced by reacting pyrazole metal complex and carbon dioxide may be transformed into several economically valuable compounds.

A pyrazole metal complex for absorption of carbon dioxide, a method for preparing the pyrazole metal complex, and a method for absorbing carbon dioxide are provided; wherein the product produced by reacting pyrazole metal complex and carbon dioxide may be transformed into several economically valuable compounds.

A feedstock material for use in an additive manufacturing apparatus is prepared from a first material and a metal organic framework (MOF). The MOF comprises a plurality of nodes and a plurality of linkers, the plurality of linkers coupled to the plurality of nodes, thereby forming a framework. The MOF has a lower coefficient of thermal expansion than a coefficient of thermal expansion for the first material. As a result, the feedstock material has a reduced coefficient of thermal expansion as compared to the first material alone and thus exhibits low thermal expansion as its temperature is increased. The coefficient of thermal expansion for the MOF may be modified by using a different plurality of nodes and/or a different plurality of linkers, as well as by incorporating guest molecules or atoms into the framework of the MOF.

The present invention provides a process for preparing 6-isopropenyl-3-methyl-9-decenyl acetate (5): wherein Ac represents an acetyl group, the process comprising steps of: subjecting a 2-methyl-2,6-heptadiene compound (1) having a leaving group X at position 1: wherein X represents an acyloxy group having 1 to 10 carbon atoms including the carbon atom of the carbonyl group, an alkanesulfonyloxy group having 1 to 10 carbon atoms, an arenesulfonyloxy group having 6 to 20 carbon atoms, or a halogen atom, to a nucleophilic substitution reaction with a 3-methylpentyl nucleophilic reagent (2) having a protected hydroxyl group at position 5: wherein M represents Li, MgZ.sup.1, ZnZ.sup.1, Cu, CuZ.sup.1, or CuLiZ.sup.1, wherein Z.sup.1 represents a halogen atom or a CH.sub.2CH.sub.2CH(CH.sub.3)CH.sub.2CH.sub.2OR group, and R represents a protecting group for a hydroxyl group, to form a 6-isopropenyl-3-methyl-9-decene compound (3) having a protected hydroxyl group at position 1: wherein R is as defined above; subjecting the 6-isopropenyl-3-methyl-9-decene compound (3) having the protected hydroxyl group at position 1 to a deprotection reaction to form 6-isopropenyl-3-methyl-9-decenol (4); and acetylating 6-isopropenyl-3-methyl-9-decenol (4) to form 6-isopropenyl-3-methyl-9-decenyl acetate (5).

##STR00001##