Functionalized Group IVA particles, methods of preparing the Group IVA particles, and methods of using the Group IVA particles are provided. The Group IVA particles may be passivated with at least one layer of material covering at least a portion of the particle. The layer of material may be a covalently bonded non-dielectric layer of material. The Group IVA particles may be used in various technologies, including lithium ion batteries and photovoltaic cells.

An organic light emitting device comprising a light emitting layer including a compound of Chemical Formula 1, and a first organic material layer including a compound of Chemical Formula 2.

##STR00001##

The present invention provides a method for producing a silanol compound capable of efficiently producing a silanol compound. The method for producing a silanol compound includes a proton exchange step of forming a silanol compound having a structure represented by following formula (c) by reacting a silicate having a structure represented by following formula (a) with an acidic compound having an acid dissociation constant pK.sub.a of −1 to 20 in dimethyl sulfoxide (DMSO).

##STR00001##

(In formula (a), Q.sup.i+ represents an i-valent cation and i represents an integer of 1 to 4).

Embodiments of the presently-disclosed subject matter include a composition that comprises a particle, a plurality of surface functional groups on a surface of the particle, and a plurality of coating polymers bound to the surface functional groups and forming a coating on the particle that includes a density ratio of about 0.1 to about 20.0, the density ratio being equal to a Flory radius of the plurality of coating polymers divided by a distance between adjacent surface functional groups. Embodiments of the presently-disclosed subject matter also include methods for making the present compositions as well as methods for using the present compositions to deliver a bioactive agent and treat a subject in need thereof.

A composition contains a naphthalocyanine derivative represented by the following formula:

##STR00001##

where R.sub.1 to R.sub.8 are each independently an alkyl group, and R.sub.9 and R.sub.10 are each independently an aryl group.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided an aza-polysilane precursor comprising at least two Si—N bonds, at least one Si—Si bond, and at least two SiH.sub.2 groups represented by the following Formula IA, IB and IC: ##STR00001##
wherein R.sup.1 and R.sup.2 are independently selected from a linear or branched C.sub.1 to C.sub.10 alkyl group, a linear or branched C.sub.3 to C.sub.10 alkenyl group, a linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.3 to C.sub.10 cyclic alkyl group, C.sub.3 to C.sub.10 hetero-cyclic alkyl group, a C.sub.5 to C.sub.10 aryl group, and a C.sub.3 to C.sub.10 hetero-aryl group, a C.sub.2 to C.sub.10 dialkylamino group, a C.sub.3 to C.sub.10 cyclic alkylamino group; R.sup.3 and R.sup.4 are independently selected from hydrogen, a linear or branched C.sub.1 to C.sub.10 alkyl group, a linear or branched C.sub.2 to C.sub.10 alkenyl group, a linear or branched C.sub.2 to C.sub.10 alkynyl group, C.sub.3 to C.sub.10 cyclic alkyl group, C.sub.3 to C.sub.10 hetero-cyclic alkyl group, a C.sub.5 to C.sub.10 aryl group, and a C.sub.3 to C.sub.10 hetero-aryl group, a C.sub.2 to C.sub.10 dialkylamino group, a C.sub.3 to C.sub.10 cyclic alkylamino group; wherein R.sup.1 in Formula IA cannot both be methyl, R.sup.1 and R.sup.2 in Formula IB cannot both be iso-propyl, tert-butyl, and bezenyl and R.sup.3 and R.sup.4 cannot both be methyl and phenyl.

Provided are a compound, including metal atoms for forming metal nano particles through a simple process within a short time at a low production cost for commercial purposes, and a solution including the compound.

Disclosed are Si-containing film forming compositions comprising carbosilane substituted amine precursors. The carbosilane substituted amine precursors have the formula (R.sup.1).sub.aN(—SiHR.sup.2—CH.sub.2—SiH.sub.2R.sup.3).sub.3-a, wherein a=0 or 1; R.sup.1 is H, a C1 to C6 alkyl group, or a halogen; R.sup.2 and R.sup.3 is each independently H; a halogen; an alkoxy group having the formula OR′, wherein R′ is an alkyl group (C1 to C6); or an alkylamino group having the formula NR″.sub.2, wherein each R″ is independently H, a C1-C6 alkyl group, a C1-C6 alkenyl group, or a C3-C10 aryl or heterocycle group. Also disclosed are methods of synthesizing the carbosilane substituted amine precursors and their use for deposition processes.

Disclosed are hexacoordinate silicon-containing precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel type devices, refractory materials, or aeronautics. The hexacoordinate silicon-containing molecule have the following formula: (I), wherein each L.sup.1, L.sup.2, L.sup.3 and L.sup.4 is independently selected from oxygen or nitrogen atoms; L.sup.1 and L.sup.2 are joined together via a carbon bridge having one to three carbon atoms; L.sup.3 and L.sup.4 are joined together via a carbon bridge having one to three carbon atoms; L.sup.1, L.sup.2 and the carbon bridge forming a monoanionic ligand bonded to silicon; and L.sup.3, L.sup.4 and the carbon bridge form a monoanionic ligand bonded to silicon.

Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR.sup.1R.sup.2R.sup.3).sub.2 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.