A compound of Chemical Formula 1 and an organic light emitting device including the same, the compound used as a material of an organic material layer of the organic light emitting device and providing high color purity and enhanced lifetime properties of the organic light emitting device. ##STR00001##

A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

Compounds effective in inhibiting replication of Hepatitis C virus (“HCV”) are described. This invention also relates to processes of making such compounds, compositions comprising such compounds, and methods of using such compounds to treat HCV infection.

Compounds effective in inhibiting replication of Hepatitis C virus (“HCV”) are described. This invention also relates to processes of making such compounds, compositions comprising such compounds, and methods of using such compounds to treat HCV infection.

Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.

A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

A compound of Chemical Formula 1 and an organic light emitting device including the same, the compound used as a material of an organic material layer of the organic light emitting device and providing high color purity and enhanced lifetime properties of the organic light emitting device.

##STR00001##

To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica. Modified colloidal silica, being obtained by modifying raw colloidal silica, wherein the raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.

A trichlorogermanide of formula (I): [R.sub.4N]/[R.sub.4P]Cl[GeCl.sub.3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R.sub.4N]/[R.sub.4P][Ge(SiCl.sub.3).sub.3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl.sub.3 of formula (III): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*GaCl.sub.3], and a tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*BBr.sub.3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV).

A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of —NR1R2, —N(R4)(CH2)nN(R5R6), —N═C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4. Compounds of the invention may be useful as precursors in chemical phase deposition processes such as atomic layer deposition (ALD), chemical vapour deposition (CVD), plasma assisted ALD and plasma assisted CVD. Methods of low temperature vapour phase deposition of metal oxide films, such as SiO2 films, are also provided.