Photoactive materials comprising organic-inorganic hybrid halide perovskite compounds are provided. Photovoltaic cells and light-emitting devices incorporating the photoactive materials into their light-absorbing and light-emitting layers, respectively, are also provided. The halide perovskites have an amAMX.sub.3 perovskite crystal structure, wherein am is an alkyl diamine cation, an aromatic diamine cation, an aromatic azole cation, a cyclic alkyl diamine cation or a hydrazinediium cation; A is a monovalent alkylammonium cation or an alkali metal cation; X is a halide ion or a combination of halide ions; and M is an octahedrally coordinated bivalent metal atom.

Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: ##STR00001##
wherein, in Chemical Formula 1, R.sup.1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R.sup.2 to R.sup.4 are each independently selected from —OR.sup.a and —OC(═O)R.sup.b. The semiconductor resist composition may have excellent solubility and storage stability.

The present disclosure is related to organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds as extreme ultraviolet (EUV) photoresist. Organometallic half-sandwich (η.sup.5-cyclopentadienyl)tin hydroxide oxide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5)SnO(OH) and (η.sup.5-cyclopentadienyl)tin tri(hydroxide) represented by the chemical formula (η.sup.5-C.sub.5R.sub.5)Sn(OH).sub.3 are described including the methods for preparation and purification, wherein R is H, alkyl, alkenyl, alkynyl, cycloalkyl group with 1 to 20 carbon atoms, and aryl group with 6-20 carbon atoms. η.sup.5-cyclopentadienyl comprises η.sup.5-C.sub.5H.sub.5, and/or substituted η.sup.5-cyclopentadienyl η.sup.5-C.sub.5H.sub.4R, η.sup.5-C.sub.5H.sub.3R.sub.2, η.sup.5-C.sub.5H.sub.2R.sub.3, η.sup.5-C.sub.5HR.sub.4, and η.sup.5-C.sub.5R.sub.5. The solution compositions of organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds are suitable for EUV photoresists, and/or as the precursors of EUV photoresists for radiation sensitive coating and forming nanoscale patterns through photolithography.

The present disclosure relates to a composition that includes a material of at least one of a perovskite structure, a perovskite-like structure, and/or a perovskitoid structure, where the material includes an isotope of an element, the isotope has more neutrons than protons, and the isotope is incorporated into the perovskite structure, the perovskite-like structure, and/or the perovskitoid structure. In some embodiments of the present disclosure, the isotope may make up between greater than 0% and 100% of the element.

The present disclosure relates to a composition that includes a material of at least one of a perovskite structure, a perovskite-like structure, and/or a perovskitoid structure, where the material includes an isotope of an element, the isotope has more neutrons than protons, and the isotope is incorporated into the perovskite structure, the perovskite-like structure, and/or the perovskitoid structure. In some embodiments of the present disclosure, the isotope may make up between greater than 0% and 100% of the element.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

The present disclosure is related to organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds as extreme ultraviolet (EUV) photoresist. Organometallic sandwich bis(cyclopentadienyl)tin oxide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5).sub.2SnO, di(cyclopentadienyl)tin dialkoxide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5).sub.2Sn(OR.sup.1)(OR.sup.2), and half-sandwich (cyclopentadienyl)tin triamide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5)Sn(NR.sup.1.sub.2)(NR.sup.2.sub.2)(NR.sup.3.sub.2) are described including the methods for preparation and purification, wherein R.sup.1, R.sup.2, R.sup.3 are independently H, alkyl (linear or branched), alkenyl, alkynyl and cycloalkyl group with 1 to 20 carbon atoms, and aryl group with 6-20 carbon atoms. Sandwich and half-sandwich comprise cyclopentadienyl (C.sub.5H.sub.5), or substituted cyclopentadienyl (η.sup.5-C.sub.5H.sub.4R, η.sup.5-C.sub.5H.sub.3R.sub.2, η.sup.5-C.sub.5H.sub.2R.sub.3, η.sup.5-C.sub.5HR.sub.4, and η.sup.5-C.sub.5R.sub.5), R is H, alkyl, alkenyl, alkynyl, cycloalkyl group with 1 to 20 carbon atoms and aryl group with 6-20 carbon atoms. The solution compositions of organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds are suitable for EUV photoresists, and/or the precursors of EUV photoresists for radiation sensitive coating and forming nanoscale patterns through photolithography.

A Pb-free Sn-halide Perovskite solar cell with improved photoelectric conversion efficiency is provided. A solar cell uses a perovskite compound represented by ABX.sub.3 where A is a cation, B is a metal, and X is a halogen, wherein each of A, B and X may be composed of a plurality of elements, and B includes Sn and Ge.

The present disclosure is related to organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds as extreme ultraviolet (EUV) photoresist. Organometallic sandwich di(cyclopentadienyl)tin dialkoxide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5).sub.2Sn(OR.sup.1)(OR.sup.2), or half-sandwich (cyclopentadienyl)tin triamide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5)Sn(NR.sup.1.sub.2)(NR.sup.2.sub.2)(NR.sup.3.sub.2) are described including the methods for preparation and purification, wherein R.sup.1, R.sup.2, R.sup.3 are independently H, linear or branched alkyl, alkenyl, alkynyl, or cycloalkyl group with 1 to 20 carbon atoms, or aryl group with 6-20 carbon atoms. Sandwich and half-sandwich groups comprise cyclopentadienyl (C.sub.5H.sub.5), or substituted cyclopentadienyl (η.sup.5-C.sub.5H.sub.4R, η.sup.5-C.sub.5H.sub.3R.sub.2, η.sup.5-C.sub.5H.sub.2R.sub.3, η.sup.5-C.sub.5HR.sub.4, or η.sup.5-C.sub.5R.sub.5). The solution compositions of organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds are suitable for EUV photoresists, and/or the precursors of EUV photoresists for radiation sensitive coating and forming nanoscale patterns through photolithography.