Patent classifications
C07F9/005
Group 5 transition metal-containing compounds for vapor deposition of group 5 transition metal-containing films
Disclosed are Group 5 transition metal-containing thin film forming precursors. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 5 transition metal-containing thin films on one or more substrates via vapor deposition processes.
MACROCYCLES
The invention relates to chemical compounds and complexes that can be used in therapeutic and diagnostic applications.
VANADIUM PYRIDINE-IMINE COMPLEX, CATALYTIC SYSTEM COMPRISING SAID VANADIUM PYRIDINE-IMMINE COMPLEX AND A (CO) POLYMERIZATION PROCESS OF CONJUGATED DIENES
Vanadium pyridine-imine complex having general formula (I), wherein:R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5 and R.sub.6, equal to or different from each other, represent a hydrogen atom; or are selected from linear or branched C.sub.1-C.sub.20 alkyl groups, preferably C.sub.1-C.sub.15, optionally halogenated cycloalkyl groups optionally substituted, aryl groups optionally substituted;X.sub.1, X.sub.2 and X.sub.3, equal to or different from each other, represent a halogen atom such as, for example, chlorine, bromine, iodine, preferably chlorine; or are selected from linear or branched C.sub.1-C.sub.20 alkyl groups, preferably C.sub.1-C.sub.15, OCOR.sub.7 groups or OR.sub.7 groups wherein R.sub.7 is selected from linear or branched C.sub.1-C.sub.20 alkyl groups, preferably C.sub.1-C.sub.15;Y is selected from ethers such as, for example, diethylether, tetrahydrofuran (THF), dimethoxyethane, preferably is etrahydrofuran (THF);n is 0 or 1. Said vanadium pyridine-imine complex having general formula (I) can be advantageously used in a catalytic system for the (co) polymerization of conjugated dienes.
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METAL BICYCLIC AMIDINATES
Compounds are synthesized with bicyclic amidinate ligands attached to one or more metal atoms. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Copper metal films are formed on heated substrates by the reaction of copper(I) bicyclic amidinate vapor and hydrogen gas, whereas reaction with water vapor produces copper oxide. Silver and gold films were deposited on surfaces by reaction of their respective bicyclic amidinate vapors with hydrogen gas. Reaction of cobalt(II) bis(bicyclic amidinate) vapor, ammonia gas and hydrogen gas deposits cobalt metal films on heated substrates, while reaction with ammonia produces cobalt nitride and reaction with water vapor produces cobalt oxide. Ruthenium metal films are deposited by reaction of ruthenium(II) bis(bicyclic amidinate) or ruthenium(III) tris(bicyclic amidinate) at a heated surface either with or without a co-reactant such as hydrogen gas or ammonia or oxygen. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. Hafnium oxide films are deposited by reaction of hafnium(IV) tetrakis(bicyclic amidinate) with oxygen sources such as water, hydrogen peroxide or ozone. The HfO.sub.2 films have high dielectric constant and low leakage current, suitable for applications as an insulator in microelectronics. The films have very uniform thickness and complete step coverage in narrow holes.
AUTOMATED META PARAMETER SEARCH FOR INVARIANT BASED ANOMALY DETECTORS IN LOG ANALYTICS
Systems and methods for automatically generating a set of meta-parameters used to train invariant-based anomaly detectors are provided. Data is transformed into a first set of time series data and a second set of time series data. A fitness threshold search is performed on the first set of time series data to automatically generate a fitness threshold, and a time resolution search is performed on the set of second time series data to automatically generate a time resolution. A set of meta-parameters including the fitness threshold and the time resolution are sent to one or more user devices across a network to govern the training of an invariant-based anomaly detector.
PHARMACEUTICAL COMPOSITIONS COMPRISING VANADIUM SALTS
The present application relates to vanadium compounds. More specifically, the present application relates to pharmaceutical compositions comprising vanadium salts, use thereof and methods using the same. The present application also includes compositions comprising vanadium compounds and a therapeutic or prophylactic virus providing for increased virus infection, spread, titer, activity, cytotoxicity and/or immunotherapeutic activity.
Cytotoxic titanium and vanadium complexes
The present application provides a family of highly resistant and water-stable Titanium and Vanadium complexes, which may be administered directly without a further hydrolysis step and which solubility and cell-penetration characteristics may be modifiable by reducing their particle size to the nanoscale.
LIGAND COMPOUND, ORGANIC CHROMIUM COMPOUND, CATALYST SYSTEM FOR OLEFIN OLIGOMERIZATION, AND METHOD FOR OLIGOMERIZING OLEFINS USING THE SAME
The present invention relates to a ligand compound, catalyst system for olefin oligomerization, and a method for oligomerizing olefins using the same. The catalyst system for olefin oligomerization according to the present invention exhibit selectivity to 1-hexene or 1-octene while having excellent catalytic activity, thus enabling more efficient preparation of alpha-olefins.
Niobium-containing film forming compositions and vapor deposition of niobium-containing films
Niobium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via vapor deposition processes using the Niobium-containing film forming compositions.
Tantalum-containing film forming compositions and vapor deposition of tantalum-containing films
Tantalum-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Tantalum-containing films on one or more substrates via vapor deposition processes using the Tantalum-containing film forming composition.