A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR.sup.1).sub.m. In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R.sup.1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.

The invention relates to chemical compounds and complexes that can be used in therapeutic and diagnostic applications.

Vanadium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Vanadium-containing films on one or more substrates via vapor deposition processes using the Vanadium-containing film forming composition.

A method for producing an aqueous electrolyte comprising a redox-active coordination compound of a transition metal which comprises reacting an oxide of the corresponding transition metal in an aqueous reaction medium with a chelating agent in a hydrothermal reaction zone at a temperature in the range of from 100 C. to 160 C. for a period of from 4 hours to 48 hours.

A compound useful for the manufacture of a Group 5 metal oxide film is provided. The compound is a Group 5 metal oxo-alkoxo complex represented by the following formula (A), and after preparing a film-forming material solution containing the compound and an organic solvent, a Group 5 metal oxide film can be manufactured using the film-forming material solution:
M.sub.(.sub.4-O).sub.(.sub.3-O).sub.(-O).sub.(-OR.sup.A).sub.(OR.sup.A).sub.(R.sup.AOH).sub.X.sub.Y.sub..Math.(A)
(wherein M represents a niobium atom, etc.; R.sup.A represents an alkyl group; X represents an alkylenedioxy group; Y represents a carboxy group, etc.; represents an integer of 3 to 10; represents 0 or 1; represents an integer of 0 to 8; represents an integer of 2 to 9; represents an integer of 0 to 6; represents an integer of 6 to 16; represents an integer of 0 to 4; represents an integer of 0 to 2; and .Math. represents an integer of 0 to 6).

Organic electronic devices comprising a covalently bonded organic/inorganic composite layer. The composite layer may be formed by the reaction of a metal alkoxide with a charge transport compound having one or more hydroxyl groups. Examples of metal alkoxides that can be used include vanadium alkoxides, molybdenum alkoxides, titanium alkoxides, or silicon alkoxides. This composite layer can be used for any of the various charge conducting layers in an organic electronic device, including the hole injection layer.

Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

Method of preparing epoxidation catalysts are disclosed, including methods comprising reacting an inorganic siliceous solid with a metal complex of the formulas: ##STR00001##
wherein the variables are defined herein.

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.

Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.