An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

A compound having a stoichiometry formula of BiL.sub.3, where each L has a formula of ##STR00001##
where each Z.sup.1 and Z.sup.2 is O, S, NR, or PR; Z.sup.3 is C; Z.sup.1, Z.sup.2, the single dashed line represent a bond to Bi; and n is an integer. In these structures, L.sub.A can be aryl or heteroaryl, which can be substituted. Substituents R.sub.L, R, L.sub.C, and R.sub.LC can be selected from a variety of substituents. In the first formula, at least one of the following is true: (1) L.sub.A includes a 5-membered ring; (2) L.sub.A includes a condensed ring system of at least three rings; (3) at least one R.sub.L is a non-fused aryl or heteroaryl moiety; or (4) n is at least 2 with two different R.sub.L's and L.sub.A-(R.sub.L)n is asymmetrical. Organic light emitting devices, consumer products, formulations, and chemical structures containing the compounds are also disclosed.

The present invention relates to an organic electroluminescent device comprising a hole-injection layer comprising a metal complex as a main component and a method for producing the organic electroluminescent device.

The present invention relates to an organic electroluminescent device comprising a hole-injection layer comprising a metal complex as a main component and a method for producing the organic electroluminescent device.

Organometallic photoresists suitable for use in deep ultraviolet (DUV) or extreme ultraviolet (EUV) lithography are provided. The organometallic photoresists contain an organometallic molecule having least a metal element M selected from the group consisting of Bi, Sb, and mixtures thereof, and having an oxidation state of 3+, and at least one polymerizable group R. A method of forming a patterned materials feature on a substrate utilizing the organometallic photoresist compositions is also provided.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Disclosed are chelates resulting from the complexation of bifunctional do2pa derivatives ligands of formula (I), wherein the substituents R.sup.1, R.sup.1′, R.sup.2, R.sup.2′, R.sup.3, R.sup.3′, L.sup.1, L.sup.1′, L.sup.2 and L.sup.2′ are defined as in the claims, with metallic cations, especially Pb(II) and Bi(III). Also disclosed are bifunctional do2pa derivatives ligands of formula (I), as well as the use of chelates in nuclear medicine and the use of ligands in cations detection or epuration of effluents. ##STR00001##

Disclosed are chelates resulting from the complexation of bifunctional do2pa derivatives ligands of formula (I), wherein the substituents R.sup.1, R.sup.1′, R.sup.2, R.sup.2′, R.sup.3, R.sup.3′, L.sup.1, L.sup.1′, L.sup.2 and L.sup.2′ are defined as in the claims, with metallic cations, especially Pb(II) and Bi(III). Also disclosed are bifunctional do2pa derivatives ligands of formula (I), as well as the use of chelates in nuclear medicine and the use of ligands in cations detection or epuration of effluents. ##STR00001##

An alloyed halide double perovskite material, an alloyed halide double perovskite solar-cell absorber and solar cells constructed with such absorbers, the alloyed halide double perovskite material having the formula A.sub.2B.sub.1-aB′.sub.1-bD.sub.xX.sub.6, where A is an inorganic cation, an organic cation, a mixture of inorganic cations, a mixture of organic cations, or a mixture of one or more inorganic cations and one or more organic cations, where B is a metal, a mixture of metals, a metalloid, a mixture of metalloids, any mixture thereof, or is a vacancy, where B′ is a metal, a mixture of metals, a metalloid, a mixture of metalloids, any mixture thereof, or is a vacancy, where D is a dopant, and where X is a halide, a pseudohalide, a mixture of halides, a mixture of pseudohalides, or a mixture of halides and pseudohalides, and where x=a+b.