Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR.sup.1R.sup.2R.sup.3).sub.2 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reactivity, is thermally stable, has high volatility, and has high storage stability, and thus, it may be used as a metal-containing precursor to easily prepare a high-purity metal-containing thin film having high density.

Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.

The present invention relates to a transition metal organic framework, comprising: a transition metal oxide having antibacterial or antifungal properties; and an organic compound having at least one hydrophilic functional group, wherein the organic compound is bound to the transition metal oxide to surround the transition metal oxide and the hydrophilic functional group is placed toward the outside of the transition metal organic framework.

Catechol metal complex compounds of formula (I)

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are colored and can be used to give color to surfactant compositions. Detergents containing these catechol metal complex compounds do not stain the textile even after repeated use.

A multi-component detergent, including at least two components, that is contained in a container having at least two chambers, wherein a first component K1 is a first liquid composition, containing at least one catechol metal complex compound of formula (I)

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and at least one free catechol compound of formula (II) or the salt thereof

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with the proviso that the catechol compound of formula (II) and the salt thereof are different from the compounds of formula (I), and a second component K2 is a second liquid composition, containing at least one surfactant. The present invention further relates to the use of the multi-component detergent for removing bleachable stains and a method for washing textiles using the multi-component detergent.

The present invention relates to a bisphosphine ligand compound, a chromium compound prepared using same, an ethylene oligomerization catalyst system containing the chromium compound, and an ethylene oligomer preparing method, wherein the bisphosphine ligand compound is suitable for mass production and commercial processes, allows extremely high activity to be compatible with excellent economical benefit, and increases selectivity for ethylene oligomerization reaction, thereby being able to be used to manufacture 1-hexene and/or 1-octene at high yield.

A hydroximic acid-metal hydroxide coordination complex and preparation and application thereof are disclosed. The hydroximic acid-metal hydroxide coordination complex is formed by a coordination of hydroximic acid with divalent or higher valent metal ions under an alkaline condition. The hydroximic acid-metal hydroxide coordination complex has a strong selectivity and a strong collection ability for metal oxide minerals such as tungsten-containing minerals, ilmenite, rutile, cassiterite, and rare earth. The preparation method is simple and low in costs, and is beneficial to industrialized production.

Methods of synthesizing crystalline metal-organic frameworks (MOFs) comprising polytopic organic linkers and cations, where each linker is connected to two or more cations, are provided. In the disclosed methods, the linkers are reacted with a compound of formula M.sub.nX.sub.m, where M is cationic Be, Mg, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Cd, or Hf, X is anionic, n and m are integers. The reacting is buffered by a buffer devoid of metal coordinating functionality when the pKa of the anion is below a threshold related to the lowest pKa of the linker. The reacting is optionally not buffered when the pKa of the anion is at or above this threshold. The disclosed methods lead to product phase MOF in which crystal growth is controlled leading to control over molecular diffusion.

A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):

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