Prostate-specific membrane antigen (PSMA) targeting compounds are described. Uses of the compounds for imaging, therapy, cell sorting, and tumor mapping are also described.

The present invention relates to metal complexes and methods of synthesizing the metal complexes. The invention is further directed to pharmaceutical and/or dietary supplement composition comprising compounds synthesized as described herein.

The invention relates to metal complex compounds of the formula M.sub.k(L).sub.x(Y).sub.kz-nx, where the ligand L has the formula (I), and to metal complex compounds which include the reaction product of at least one salt or a complex of a transition metal or a main group metal element of the groups 13 to 15 and at least one 1,3-ketoamide. Such complex compounds are suitable in particular as catalysts for polyurethane compositions. The invention also relates to two-component polyurethane compositions including at least one polyisocyanate as the first component, at least one polyol as the second component, and at least one such metal complex compound as the catalyst. The invention additionally relates to different uses of the two-component polyurethane compositions.

The invention provides novel manganese catalysts such as [Mn(.sup.tBuPc)], which are general for the amination of all types of C(sp.sup.3)-H bonds (aliphatic, allylic, propargylic, benzylic, ethereal), including strong 1.sup.o aliphatic C—H bonds, while achieving excellent chemoselectivity, stereospecificity, and high functional group tolerance. We demonstrate the late-stage diversification of bioactive complex molecules that encompass the range of C(sp.sup.3)-H bond types, such as selective 1.sup.o C—H aminations of betulinic acid and pleuromutilin derivatives. The catalysts' unprecedented balance of reactivity and selectivity is in part attributed to its mechanism of C—H amination that lies between stepwise and concerted.

A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I): ##STR00001##
wherein M is a metal selected from Groups 2 through 12 of the Periodic Table; and R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are each independently H or C.sub.1-C.sub.8 alkyl.

The present invention relates to a novel process for preparing a compound of formula (III) and rhenium chelated MAG3 oligonucleotides.

##STR00001##

Provided herein are fluoro-substituted porphyrin compounds, such as those having a structure represented by Formula (I), wherein R.sup.1 is a C1-C8 alkyl that is substituted with at least 1 fluorine (e.g., a C1-C8 alkyl substituted with 1-17 fluorine atoms); and X is an anion (e.g. a halogen ion (e.g., chloride, etc.), PF.sub.6, tosylate, besylate, and/or mesylate). Also provided herein are methods of making the fluoro-substituted porphyrin compounds, pharmaceutical formulations containing the same, and methods of use thereof.

The present disclosure relates to a mixture that includes a perovskite precursor, a solvent, and an additive that includes at least one of a first amine, a ketone, an aldehyde, a non-nucleophilic sterically hindered base, and/or a halogen-containing compound, where, upon removal of the solvent and the additive, the perovskite precursor is capable of being transformed into a perovskite.

The invention relates to a method of producing the radiolabeled aryl compound (I) Ar—X, or a salt thereof, wherein X is .sup.211At, .sup.210At, .sup.123I, .sup.124I, .sup.125I, or .sup.131I. The method involves reacting the aryl boronic acid compound (II) Ar—Y, or a salt thereof, wherein Y is a borono group (—B(OH).sub.2) or an ester group thereof, with a radionuclide selected from .sup.211At, .sup.210At, .sup.123I, .sup.124I, .sup.125I and .sup.131I, in the presence of an oxidizing agent selected from an alkali metal iodide, an alkali metal bromide, N-bromosuccinimide, N-chlorosuccinimide and hydrogen peroxide, in water.

This disclosure relates to tertiary amine solutions of metal precursors used for chemical vapor deposition or atomic layer deposition. The tertiary amine solutions have many advantages. They dissolve high concentrations of non-polar precursors without reacting with them. They do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. Vaporization rates can be chosen so that the solute and solvent may be evaporated simultaneously, have high flash points, and low flammability. Small droplets may be formed easily which facilitate rapid evaporation without decomposition of he dissolved metal precursor to supply vapors for chemical vapor deposition or atomic layer deposition processes.