Provided is an ionic solid having pores for incorporating a substance therein.

This disclosure relates to tertiary amine solutions of metal precursors used for chemical vapor deposition or atomic layer deposition. The tertiary amine solutions have many advantages. They dissolve high concentrations of non-polar precursors without reacting with them. They do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. Vaporization rates can be chosen so that the solute and solvent may be evaporated simultaneously, have high flash points, and low flammability. Small droplets may be formed easily which facilitate rapid evaporation without decomposition of he dissolved metal precursor to supply vapors for chemical vapor deposition or atomic layer deposition processes.

To provide a liquid metal complex having an oxygen absorbing ability, containing a cobalt-acacen complex or a derivative thereof, and an ionic liquid in which an ionic ligand having an amine structure and a counter ion thereof are paired, in which the cobalt-acacen complex or the derivative thereof is expressed by general formula (1):

##STR00001##

and the liquid metal complex has a structure in which the amine structure of the ionic ligand is axially coordinated with a cobalt atom of the cobalt-acacen complex or the derivative thereof.

A pyrazole metal complex for absorption of carbon dioxide, a method for preparing the pyrazole metal complex, and a method for absorbing carbon dioxide are provided; wherein the product produced by reacting pyrazole metal complex and carbon dioxide may be transformed into several economically valuable compounds.

Cobalt precursors are described, having application for vapor deposition of cobalt on substrates, such as in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes for forming interconnects, capping structures, and bulk cobalt conductors, in the manufacture of integrated circuitry and thin film products.

Cobalt precursors are described, having application for vapor deposition of cobalt on substrates, such as in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes for forming interconnects, capping structures, and bulk cobalt conductors, in the manufacture of integrated circuitry and thin film products.

A method for depositing a metal layer includes a step of contacting a surface of an electrically conductive substrate with a vapor of a metal-containing compound for a first predetermined pulse time to form a modified surface on the electrically conductive substrate. The metal-containing compound is a metal diketonate or a structurally similar compound. The modified surface is contacted with a vapor of a reducing agent that is a hydrazine or a hydrazine derivative for a second predetermined pulse time to form a metal-containing film on the surface of the electrically conductive substrate. Characteristically, the metal-containing film includes the metal atom in a zero oxidation state in an amount greater than 80 mole percent.

A raw material for forming a thin film, comprising a compound represented by General Formula (1) below.

##STR00001##

(in the formula, R.sup.1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R.sup.2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R.sup.3 and R.sup.4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.)

Disclosed are compounds, methods, reagents, systems, and kits for the preparation and utilization of monomeric or polymeric metal-based compounds. These metal-based compounds are organometallic catalysts composed of substituted dipyrrin ligands bound to transition metals. C—H bond functionalization catalysis can be performed with the disclosed organometallic catalysts to yield C—N bonds to generate substituted bicyclic, spiro, and fused nitrogen-containing heterocycles, all common motifs in various pharmaceutical and bioactive molecules.

To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas.

A cobalt complex represented by the following formula (1):

L.sup.1-Co-L.sup.2  (1)

wherein L.sup.1 and L.sup.2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C):

##STR00001##

wherein R.sup.1 and R.sup.2 represent a C.sub.1-6 alkyl group or a tri(C.sub.1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom;

##STR00002##

wherein R.sup.3 represents a tri(C.sub.1-6 alkyl)silyl group, R.sup.4 and R.sup.5 represent a C.sub.1-4 alkyl group, and X represents a C.sub.1-6 alkylene group;

##STR00003##

wherein R.sup.6 and R.sup.8 represent a C.sub.1-6 alkyl group, R.sup.7 represents a hydrogen atom or a C.sub.1-4 alkyl group, Y represents an oxygen atom or NR.sup.9, Z represents an oxygen atom or NR.sup.10, and R.sup.9 and R.sup.10 independently represent a C.sub.1-6 alkyl group.