The present specification relates to a compound represented by Chemical Formula 1, a composition for forming an optical film and an optical film comprising the same, and a display device comprising the optical film.

Provided is a thin-film forming raw material containing a compound represented by the following formula (1):

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in the formula (1), R.sup.1 to R.sup.5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R.sup.2, R.sup.3, and R.sup.4 represents the group containing a fluorine atom.

A method for forming a metal-containing film includes: a) providing at least one substrate; b) delivering to said substrate at least one compound of Formula 1 in the gaseous phase, (R.sup.1R.sup.2R.sup.3 (Si))—Co(CO).sub.4 (Formula 1), wherein R.sup.1, R.sup.2 and R.sup.3 are independently selected lower alkyl groups; and c) simultaneously with or subsequently to step b), delivering to said substrate a co-reagent in the gaseous phase, the co-reagent being lower alcohol. Further, a method of selectively depositing a metal-containing film includes: a) providing at least two substrates comprising different materials, one of said at least two substrates has an affinity for Si and another of said at least two substrates has an affinity for CO; b) delivering to said substrates at least one compound of the Formula 1 in the gaseous phase; and c) simultaneously with or subsequently to step b), delivering to said at least two substrates at least one co-reagent in the gaseous phase.

A method for forming a metal-containing film includes: a) providing at least one substrate; b) delivering to said substrate at least one compound of Formula 1 in the gaseous phase, (R.sup.1R.sup.2R.sup.3 (Si))—Co(CO).sub.4 (Formula 1), wherein R.sup.1, R.sup.2 and R.sup.3 are independently selected lower alkyl groups; and c) simultaneously with or subsequently to step b), delivering to said substrate a co-reagent in the gaseous phase, the co-reagent being lower alcohol. Further, a method of selectively depositing a metal-containing film includes: a) providing at least two substrates comprising different materials, one of said at least two substrates has an affinity for Si and another of said at least two substrates has an affinity for CO; b) delivering to said substrates at least one compound of the Formula 1 in the gaseous phase; and c) simultaneously with or subsequently to step b), delivering to said at least two substrates at least one co-reagent in the gaseous phase.

The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and particularly to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having superior thermal stability and reactivity, and a method of preparing the same.

The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and particularly to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having superior thermal stability and reactivity, and a method of preparing the same.

Embodiments relate to a method of producing a modified double metal cyanide complex, a method of producing a monol or polyol that includes providing the modified double metal cyanide complex, an alkylene oxide polymerization process that includes providing the modified double metal cyanide complex, a batch, semi-batch, or continuous manufacturing process that includes providing the modified double metal cyanide complex, and a polyether polyol prepared using the batch, semi-batch, or continuous manufacturing process that includes providing the modified double metal cyanide complex.

The present invention provides a compound comprising a moiety of the formula: (I) where said moiety of formula I is a radical, a cation, or a radical dication; Y.sup.1, Y.sup.2, Y.sup.3, R.sup.1a, R.sup.1b, R.sup.1c, R.sup.1d, R.sup.2a, R.sup.2b, R.sup.2c, R.sup.2d, R.sup.3a, R.sup.3b, R.sup.3c, and R.sup.3d are as defined herein. Compounds containing a moiety of Formula I are useful in a wide variety of applications including, but not limited to, as photocatalysts, use in OLEDs, in electronic components, etc. As an organic-based photocatalysts, compounds containing a moiety of Formula I are activated by a relatively low energy electromagnetic wavelength, e.g., wavelength of 600 nm or greater. Furthermore, compounds of the invention can be used as both photoreduction catalysts and photooxidation catalysts.

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Compositions and methods comprising metal organic frameworks (MOFs) and related uses are generally provided. In some embodiments, a MOF comprises a plurality of metal ions, each coordinated with at least one ligand comprising at least two sets of ortho-diimine groups arranged about an organic core.

The present invention relates to nanoparticles including a crystal structure-controlled zeolitic imidazolate framework (ZIF) and a method of producing the same. Nanoparticles according to the present invention comprise: metal ions; and an organic ligand coupled to the metal ions, wherein the organic ligand includes an imidazolate-based organic ligand and an alkylamine-based organic ligand.