The ultraviolet light-emitting device includes a base, a nitride semiconductor ultraviolet light-emitting element flip-chip mounted on the base, and a lens for sealing a nitride semiconductor ultraviolet light-emitting element to focus or diffuse light emitted from the nitride semiconductor ultraviolet light-emitting device. The lens is composed of an amorphous fluororesin in which a structural unit of a polymer or copolymer has a fluorine-containing aliphatic cyclic structure and a terminal functional group is a perfluoroalkyl group, and a density of the amorphous fluororesin is higher than 2.11 g/cm.sup.3.

A low stress moisture resistant structure of semiconductor device comprises a low stress moisture resistant layer, wherein a semiconductor device is formed on a semiconductor wafer, the semiconductor device comprises at least one pad, the low stress moisture resistant layer is coated on the semiconductor device and the semiconductor wafer so that a pad top center surface of the pad is exposed. The low stress moisture resistant layer comprises a material comprising crosslinked fluoropolymer. A before-coated stress measured on the semiconductor wafer before the low stress moisture resistant layer is coated and an after-cured stress measured on the semiconductor wafer after the low stress moisture resistant layer is coated and cured define a stress difference, the stress difference is greater than or equal to 510.sup.7 dyne/cm.sup.2 and less than or equal to 510.sup.7 dyne/cm.sup.2.

A low stress moisture resistant structure of semiconductor device comprises a low stress moisture resistant layer, wherein a semiconductor device is formed on a semiconductor wafer, the semiconductor device comprises at least one pad, the low stress moisture resistant layer is coated on the semiconductor device and the semiconductor wafer so that a pad top center surface of the pad is exposed. The low stress moisture resistant layer comprises a material comprising crosslinked fluoropolymer. A before-coated stress measured on the semiconductor wafer before the low stress moisture resistant layer is coated and an after-cured stress measured on the semiconductor wafer after the low stress moisture resistant layer is coated and cured define a stress difference, the stress difference is greater than or equal to 510.sup.7 dyne/cm.sup.2 and less than or equal to 510.sup.7 dyne/cm.sup.2.

The invention pertains to a method of making fluoropolymer dispersions using certain polyfunctional perfluoropolyether derivatives including a plurality of ionisable groups selected from the group consisting of SO.sub.3X.sub.a, PO.sub.3X.sub.a and COOX.sub.a, whereas X.sub.a is H, an ammonium group or a monovalent metal, and whereas said groups are comprised as pendant groups in the perfluoropolyether chain, and to fluoropolymer dispersions therefrom.

The invention pertains to a method of making fluoropolymer dispersions using certain polyfunctional perfluoropolyether derivatives including a plurality of ionisable groups selected from the group consisting of SO.sub.3X.sub.a, PO.sub.3X.sub.a and COOX.sub.a, whereas X.sub.a is H, an ammonium group or a monovalent metal, and whereas said groups are comprised as pendant groups in the perfluoropolyether chain, and to fluoropolymer dispersions therefrom.

A crosslinking agent includes a compound represented by the following formula (1). ##STR00001##
wherein R.sup.1, R.sup.2, and R.sup.3 are independently a hydrogen atom, a fluorine atom, an alkyl group, a fluoroalkyl group, or a substituted or unsubstituted aryl group, a plurality of R.sup.1 are identical to or different from each other, a plurality of R.sup.2 are identical to or different from each other, a plurality of R.sup.3 are identical to or different from each other, provided that at least one of R.sup.1, R.sup.2, and R.sup.3 is a hydrogen atom, and at least one of R.sup.1, R.sup.2, and R.sup.3 is a fluorine atom or a fluorine atom-containing group, m is an integer from 2 to 6, l is an integer from 0 to 2, and each hydrogen on the benzene ring(s) may be substituted.

A crosslinking agent includes a compound represented by the following formula (1). ##STR00001##
wherein R.sup.1, R.sup.2, and R.sup.3 are independently a hydrogen atom, a fluorine atom, an alkyl group, a fluoroalkyl group, or a substituted or unsubstituted aryl group, a plurality of R.sup.1 are identical to or different from each other, a plurality of R.sup.2 are identical to or different from each other, a plurality of R.sup.3 are identical to or different from each other, provided that at least one of R.sup.1, R.sup.2, and R.sup.3 is a hydrogen atom, and at least one of R.sup.1, R.sup.2, and R.sup.3 is a fluorine atom or a fluorine atom-containing group, m is an integer from 2 to 6, l is an integer from 0 to 2, and each hydrogen on the benzene ring(s) may be substituted.

A solid electrolyte composition for a lithium secondary battery including a fluorine-based polymer having grafted thereon a unit comprising alkylene oxide group and a crosslinkable functional group. The polymer may be formed by a process including grafting a monomer on a fluorine-based polymer, where the monomer includes alkylene oxide group and a crosslinkable functional group. Also disclosed is a solid electrolyte for a secondary battery formed by thermally curing the composition. By graft copolymerizing a monomer including alkylene oxide group and a crosslinkable functional group on a fluorine-based polymer having high lithium ion conductivity, the solid electrolyte is capable of providing a solid electrolyte for a secondary battery having significantly enhanced solid electrolyte ion conductivity and electrochemical stability.

Disclosed herein is a method of manufacturing a membrane electrode assembly (MEA) including directly depositing a liquid suspension containing a platinum precursor onto an ionically conductive membrane (e.g., proton-exchange membrane) that, when the platinum precursor deposit layer is reduced, provides a layer that will scavenge hydrogen that has diffused back through the membrane due to cell stack pressure differential.

Disclosed herein is a method of manufacturing a membrane electrode assembly (MEA) including directly depositing a liquid suspension containing a platinum precursor onto an ionically conductive membrane (e.g., proton-exchange membrane) that, when the platinum precursor deposit layer is reduced, provides a layer that will scavenge hydrogen that has diffused back through the membrane due to cell stack pressure differential.