This invention is about a water soluble antimicrobial polyacrylate silver salt. The molecular chain of the polyacrylate silver salt comprises sodium carboxylic group (COONa) and silver carboxylic group (COOAg). It is synthesized by dissolving an polyacrylate polymer comprising sodium carboxylic group (COONa) in water and then exchanging the sodium carboxylic group of the polyacrylate polymer to silver carboxylic group (COOAg) using silver salt in aqueous solution. Ultrafiltration membrane is used to remove the sodium salt generated from the metal ion exchanging procedure. An aqueous solution of water soluble antimicrobial polyacrylate silver salt with very few impurity is obtained. The water soluble antimicrobial polyacrylate silver salt is then obtain-ned from the aqueous solution. The molar ratio of COOAg to COONa of thus obtained water soluble antimicrobial polyacrylate silver salt can be as high as 66/34.

This invention is about a water soluble antimicrobial polyacrylate silver salt. The molecular chain of the polyacrylate silver salt comprises sodium carboxylic group (COONa) and silver carboxylic group (COOAg). It is synthesized by dissolving an polyacrylate polymer comprising sodium carboxylic group (COONa) in water and then exchanging the sodium carboxylic group of the polyacrylate polymer to silver carboxylic group (COOAg) using silver salt in aqueous solution. Ultrafiltration membrane is used to remove the sodium salt generated from the metal ion exchanging procedure. An aqueous solution of water soluble antimicrobial polyacrylate silver salt with very few impurity is obtained. The water soluble antimicrobial polyacrylate silver salt is then obtain-ned from the aqueous solution. The molar ratio of COOAg to COONa of thus obtained water soluble antimicrobial polyacrylate silver salt can be as high as 66/34.

A method is described for immediately terminating free radical polymerizations by adding an inhibitor solution comprising a phenothiazine compound and/or a monoalkyl ether of hydroquinone to the free radical polymerizing system. The method is characterized in that the solvent of the inhibitor solution comprises at least 50% by weight of the solvent of alkylene glycol and/or polyalkylene glycol and/or terminally etherified derivatives of alkylene glycol and/or of polyalkylene glycol. The method permits the use of nontoxic inhibitor solutions. Inhibitor solutions are also described which comprise a phenothiazine compound and/or a monoalkyl ether of hydroquinone and, as solvent, alkylene glycol and/or polyalkylene glycol and/or terminally etherified derivatives of these compounds.

A method is described for immediately terminating free radical polymerizations by adding an inhibitor solution comprising a phenothiazine compound and/or a monoalkyl ether of hydroquinone to the free radical polymerizing system. The method is characterized in that the solvent of the inhibitor solution comprises at least 50% by weight of the solvent of alkylene glycol and/or polyalkylene glycol and/or terminally etherified derivatives of alkylene glycol and/or of polyalkylene glycol. The method permits the use of nontoxic inhibitor solutions. Inhibitor solutions are also described which comprise a phenothiazine compound and/or a monoalkyl ether of hydroquinone and, as solvent, alkylene glycol and/or polyalkylene glycol and/or terminally etherified derivatives of these compounds.

The present invention provides a composition for a semiconductor device, where the composition is such that the removability of residues is excellent and the dissolution of tungsten is further suppressed. The composition for a semiconductor device contains a resin having a repeating unit A derived from a polymerizable compound containing a nitrogen atom and water, where a ClogP of the polymerizable compound is 0.5 or more and a solubility of the resin in water at 25 C. is 0.01% by mass or more.

The present invention provides a composition for a semiconductor device, where the composition is such that the removability of residues is excellent and the dissolution of tungsten is further suppressed. The composition for a semiconductor device contains a resin having a repeating unit A derived from a polymerizable compound containing a nitrogen atom and water, where a ClogP of the polymerizable compound is 0.5 or more and a solubility of the resin in water at 25 C. is 0.01% by mass or more.

Agrochemical aqueous compositions containing at least one organic, solid agrochemically active ingredient which is insoluble in water and, as dispersing and wetting agent, a water soluble polymer based on one or more ethylenically unsaturated carboxylic acids, from 5% to 55% of the carboxylic groups of said water soluble polymer being esterified with a polyalkoxylated polystyrylphenol.

Agrochemical aqueous compositions containing at least one organic, solid agrochemically active ingredient which is insoluble in water and, as dispersing and wetting agent, a water soluble polymer based on one or more ethylenically unsaturated carboxylic acids, from 5% to 55% of the carboxylic groups of said water soluble polymer being esterified with a polyalkoxylated polystyrylphenol.

The present invention relates to partial decarboxylation of polyitaconic acid polymers or copolymers. The partially decarboxylated resins are suitable for use in preparation of dispersions as well as for anti-scaling applications.

There is provided a dispersion composition capable of forming a film being excellent in surface conditions, the dispersion composition containing metal oxide particles (A) having a primary particle diameter of 1 nm to 100 nm, a polymer compound (B) having an acid value of less than 120 mgKOH/g, which is represented by the following Formula (1), and a solvent (C).

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