Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.

Disclosed are novel phosphono-phosphate polymer compositions with multi-valent cations in aqueous solutions. These compositions can further include mono or multivalent anions.

Chemically inert, mechanically tough, cationic metallo-polyelectrolytes designed as durable anion-exchange membranes (AEMs) via ring-opening metathesis polymerization (ROMP) of cobaltocenium-containing cyclooctene with triazole as the only linker group, followed by backbone hydrogenation to provide a new class of AEMs with a polyethylene-like framework and alkaline-stable cobaltocenium cation for ion transport, which exhibit excellent thermal, chemical and mechanical stability, as well as high ion conductivity.

The present invention provides a catalyst composition including a functionalizing agent of the following Formula 1 together with a rare earth metal compound, an alkylating agent, and a halogen compound, having good catalytic activity and polymerization reactivity and useful for the preparation of a conjugated diene-based polymer having high linearity and excellent processability, and a conjugated diene-based polymer prepared using the catalyst composition.
(X.sub.1).sub.aSn(X.sub.2).sub.4-a[Formula 1] In Formula 1, a, X.sub.1, and X.sub.2 are the same as defined in the disclosure.

Organometallic redox mediator compounds, such as substituted ferrocenes or other metallocenes, and redox polymers comprising the organometallic redox mediators are described. The organic groups of the organometallic redox mediators can be substituted with multiple (e.g., at least three or at least four) electron-donating substituents, which can reduce the redox potential of the redox mediator compared to the corresponding unsubstituted redox mediator. Electrodes coated with the redox polymers or blends comprising the redox polymers are described, as are related electrochemical sensors. In addition, methods of using the sensors to detect biological analytes of interest, such as glucose or ketones, are described.

Organometallic redox mediator compounds, such as substituted ferrocenes or other metallocenes, and redox polymers comprising the organometallic redox mediators are described. The organic groups of the organometallic redox mediators can be substituted with multiple (e.g., at least three or at least four) electron-donating substituents, which can reduce the redox potential of the redox mediator compared to the corresponding unsubstituted redox mediator. Electrodes coated with the redox polymers or blends comprising the redox polymers are described, as are related electrochemical sensors. In addition, methods of using the sensors to detect biological analytes of interest, such as glucose or ketones, are described.

The invention relates to fine and uniform copolymer powders of partial mixed metal salts of lower alkyl vinyl ether-maleic acid copolymers having a defined particle size distribution. In particular; it relates to powders that are suitably used in the areas of oral care and pharmaceuticals and to methods for preparing the powders. Provided is a composition of powders of partial mixed metal salts of lower alkyl vinyl ether-maleic acid copolymers having: (i) a Dv50 of less than or equal to 25 microns; a Dv90 of less than or equal to 50 microns; and (ii) a particle uniformity reflected by a Dv90/Dv10 ratio of less than or equal to 10.

Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.

Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.

A method for preparing a polymeric material doped with at least one first metal element and at least one second metal element, including: a) copolymerization of a first monomer containing a first metal element and of a second monomer containing a chelating group of a second metal element, to obtain a polymeric material containing (i) recurrent units deriving from the polymerization of the first monomer, the recurrent units containing the first metal element and (ii) recurrent units deriving from the polymerization of the second monomer, the recurrent units containing chelating groups of a second metal element, and when the first metal element is different from the second metal element, b) contacting the material from a) with a solution containing the second metal element, in return for which the second metal element is complexed with the chelating groups, where b) is optional when the first and second metal element are identical.