Patent classifications
C08F216/02
Polymer compound, positive resist composition, laminate, and resist patterning process
A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3), ##STR00001##
wherein M.sub.b.sup.+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b), ##STR00002## This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.
Polymer compound, positive resist composition, laminate, and resist patterning process
A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3), ##STR00001##
wherein M.sub.b.sup.+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b), ##STR00002## This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.
POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS
A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3),
##STR00001##
wherein M.sub.b.sup.+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b),
##STR00002##
This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.
POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS
A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3),
##STR00001##
wherein M.sub.b.sup.+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b),
##STR00002##
This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.
Composition, method of forming resist underlayer film, and method of forming resist pattern
A composition includes: a compound including an aromatic ring; and a first polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2). A content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass. R.sup.1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; and R.sup.2 represents a substituted or unsubstituted monovalent hydrocarbon group. R.sup.3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring; R.sup.4 represents a hydroxy group or a monovalent hydroxyalkyl group; and n is an integer of 1 to 8. ##STR00001##
Composition, method of forming resist underlayer film, and method of forming resist pattern
A composition includes: a compound including an aromatic ring; and a first polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2). A content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass. R.sup.1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; and R.sup.2 represents a substituted or unsubstituted monovalent hydrocarbon group. R.sup.3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring; R.sup.4 represents a hydroxy group or a monovalent hydroxyalkyl group; and n is an integer of 1 to 8. ##STR00001##
Composition, pattern forming method, semiconductor device, and method for manufacturing semiconductor device
According to one embodiment, a composition including a compound is provided. The compound includes a linking group containing 2 to 18 carbon atoms, a polymerizable functional group bonded to the linking group, a first reactive group bonded to the linking group, and a second reactive group bonded to the linking group. The polymerizable functional group includes at least one of a (meth)acryloyl group or a vinyl group. The first reactive group includes at least one selected from the group consisting of a thiol group, a disulfide group, and a thiocyanate group. The second reactive group includes at least one selected from the group consisting of an alkoxysilane group, a chlorosilane group, and a hydroxyl group.