Patent classifications
C08F228/06
METHOD FOR MANUFACTURING POLYMER COMPOUND
A method for manufacturing a polymer compound which has a constituent unit (a10) which includes a hydroxy group and a constituent unit (a1) which includes an acid decomposable group of which a polarity increases due to an effect of an acid, the method including copolymerizing a monomer for deriving a constituent unit (a0) which includes a group which protects a phenolic hydroxyl group or a hydroxy group of a carboxy group with an organic silicon compound and a monomer for deriving the constituent unit (a1) and obtaining a prepolymer which has the constituent unit (a0) and the constituent unit (a1), and selectively deprotecting the constituent unit (a0) by reacting a compound which has a fluoride anion with the prepolymer and obtaining a polymer compound which has the constituent unit (a10) and the constituent unit (a1).
Composition and applications of a multi-component benzo[1,2-B:4,5-B] dithiophene-difluorothienothiophene randomly substituted polymers for organic solar cells
A polymer having two different sets of repeat units consisting essentially of: ##STR00001##
In this polymer, R1, R2, R3 and R4 can be independently selected from the group consisting of alkyl group, alkoxy group, aryl groups and combinations thereof. Also the combination of R1, R2, R3 and R4 are not all identical and n and o are greater than 1.
Composition and applications of a multi-component benzo[1,2-B:4,5-B] dithiophene-difluorothienothiophene randomly substituted polymers for organic solar cells
A polymer having two different sets of repeat units consisting essentially of: ##STR00001##
In this polymer, R1, R2, R3 and R4 can be independently selected from the group consisting of alkyl group, alkoxy group, aryl groups and combinations thereof. Also the combination of R1, R2, R3 and R4 are not all identical and n and o are greater than 1.
Semiconductor materials prepared from dithienylvinylene copolymers
Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic -conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.
Semiconductor materials prepared from dithienylvinylene copolymers
Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic -conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.
RESIST COMPOSITION AND PATTERNING PROCESS
A resist composition comprising a base polymer and a sulfonium or iodonium salt of sulfonic acid containing a morpholino group offers dimensional stability on PPD and a satisfactory resolution.
Asymmetric regio-regular conjugated polymers for electronic applications
A polymer consisting of a regio-regular polymer backbone basing on asymmetric fluorine-substituted 2,1,3-benzothiadiazole units (FBT) having a Formula 1MP0: ##STR00001##
where. R1 is any alkyl group of 1-30 carbons; R2 is any alkyl group of 1-30 carbons; n is any number greater than 6; D is an aryl moiety.
Asymmetric regio-regular conjugated polymers for electronic applications
A polymer consisting of a regio-regular polymer backbone basing on asymmetric fluorine-substituted 2,1,3-benzothiadiazole units (FBT) having a Formula 1MP0: ##STR00001##
where. R1 is any alkyl group of 1-30 carbons; R2 is any alkyl group of 1-30 carbons; n is any number greater than 6; D is an aryl moiety.
RESIST COMPOSITION AND PATTERN FORMING PROCESS
A resist composition is provided comprising a polymer comprising recurring units (a) having an oxazolidinedione, thioxooxazolidinone, thiazolidinedione or thioxothiazolidinone structure and recurring unit (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group. The resist composition suppresses acid diffusion, exhibits a high resolution, and forms a pattern of satisfactory profile with low edge roughness.
Resin, photoresist composition, and method for producing photoresist pattern
A resin comprising: a structural unit which has, at a side chain, a carbonyl group and a thiolactone ring-containing amino group where the thiolactone ring may have a substituent, and a structural unit having an acid-labile group.