Patent classifications
C08G8/02
Poly(ether ketone) polymers comprising cycloaliphatic units
A poly(ether ketone) polymer comprising recurring units derived from the reaction of at least one aromatic dihalo-compound comprising at least one —C(O)— group and at least one diol having a general formula HO-D.sub.ol-OH wherein D.sub.ol is an aliphatic group comprising from 4 to 20 carbon atoms which comprises at least one cycloaliphatic moiety.
Compound containing phenolic hydroxyl group, phenolic resin, curable composition, cured product thereof, semiconductor sealing material, and printed circuit board
There are provided a compound containing a phenolic hydroxyl group which exhibits excellent heat resistance and excellent flame retardancy in terms of a cured product, a phenolic resin including the same, a curable composition and a cured product thereof, and a semiconductor sealing material. The compound containing a phenolic hydroxyl group has a dinaphthofuran skeleton, in which each of the two naphthylene skeletons has a hydroxyl group on an aromatic nucleus thereof.
Compound containing phenolic hydroxyl group, phenolic resin, curable composition, cured product thereof, semiconductor sealing material, and printed circuit board
There are provided a compound containing a phenolic hydroxyl group which exhibits excellent heat resistance and excellent flame retardancy in terms of a cured product, a phenolic resin including the same, a curable composition and a cured product thereof, and a semiconductor sealing material. The compound containing a phenolic hydroxyl group has a dinaphthofuran skeleton, in which each of the two naphthylene skeletons has a hydroxyl group on an aromatic nucleus thereof.
Polyarylethersulfone copolymers
The invention relates to a method for preparing polyarylethersulfone-polyalkylene oxide block copolymers (PPC) comprising the polycondensation of a reaction mixture (R.sub.G) comprising the components: (A1) at least one aromatic dihalogen compound, (B1) at least one aromatic dihydroxyl compound, (B2) at least one polyalkylene oxide having at least two hydroxyl groups, (C) at least one aprotic polar solvent and (D) at least one metal carbonate, where the reaction mixture (R.sub.G) does not comprise any substance which forms an azeotrope with water.
Phosphonated polymers, and methods of production thereof, for use as polymer electrolyte membranes (PEMs) and/or catalyst ionomeric binders for electrodes in PEM fuel cells
The present disclosure provides phosphonated polymers that can be used, for example, as polymer electrolyte membranes (PEMs) and/or catalyst ionomeric binders for electrodes in PEM fuel cells, and more particularly for high-temperature PEM fuel cells. High-temperature PEM fuel cells that use phosphonated polymers of the present disclosure suffer from reduced or no acid leaching because, in at least some examples, phosphonic acid moieties are covalently bound to the backbone of the polymers. A phosphonated polymer include a backbone having one or more aromatic monomers, with each aromatic monomer having one or more phosphonic acid groups. A phosphonic acid group may include phosphonic acid or a functional group that is hydrolysable into phosphonic acid.
COPOLYMERS, THEIR PREPARATION AND USE
This invention relates to copolymers which consist essentially of [-ether-phenyl-ether-phenyl-carbonyl-phenyl-]and [ether-phenyl-phenyl-ether-phenyl-carbonyl-phenyl-] repeat units, as well as end units, which have reduced melting temperature (Tm) compared to prior art copolymers including such repeat units. The copolymers of the invention exhibit crystallinity and have similar glass transition temperatures to the prior art polymers.
COPOLYMERS, THEIR PREPARATION AND USE
This invention relates to copolymers which consist essentially of [-ether-phenyl-ether-phenyl-carbonyl-phenyl-]and [ether-phenyl-phenyl-ether-phenyl-carbonyl-phenyl-] repeat units, as well as end units, which have reduced melting temperature (Tm) compared to prior art copolymers including such repeat units. The copolymers of the invention exhibit crystallinity and have similar glass transition temperatures to the prior art polymers.
Spin-on compositions comprising an inorganic oxide component and an alkynyloxy substituted spin-on carbon component useful as hard masks and filling materials with improved shelf life
The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma. ##STR00001##
Spin-on compositions comprising an inorganic oxide component and an alkynyloxy substituted spin-on carbon component useful as hard masks and filling materials with improved shelf life
The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma. ##STR00001##
SPIN-ON COMPOSITIONS COMPRISING AN INORGANIC OXIDE COMPONENT AND AN ALKYNYLOXY SUBSTITUTED SPIN-ON CARBON COMPONENT USEFUL AS HARD MASKS AND FILLING MATERIALS WITH IMPROVED SHELF LIFE
The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma.
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