Patent classifications
C08G8/02
Isatin copolymers having intrinsic microporosity
A copolymer including a repeating unit represented by Formula I: wherein: L is a divalent hydrocarbon group comprising from 1 to 12 carbon atoms; and L is optional and when present is represented by Formula II: wherein: Y, Y and Y if present, are independently selected from: a carboxylic acid, sulfonic acid, phosphorous acid and phosphoric acid and their corresponding salt or ester; imino, amide, nitrile, hydrogen, hydroxyl and alkyl comprising from 1 to 6 carbon atoms; and A, A and A if present, are independently selected from an arylene moiety, with the proviso one or both Y and A may not be present. ##STR00001##
METHODS FOR MANUFACTURING SPATIAL OBJECTS
Methods for producing spatial objects are disclosed. The methods generally include printing a spatial object, in an amorphous phase, using a three-dimensional (3D) printer and a printing material that consists essentially of polyaryletherketones. The methods further entail placing the spatial object in a container and submerging the spatial object in a suitable charging material. Next, vibrations are applied to the container that includes the spatial object and charging material. The container, charging material, and spatial object are then heated until the spatial object transitions into a semi-crystalline phase (at which point the spatial object can be removed from the container and charging material).
RESIN COMPOSITION AND MULTILAYER SUBSTRATE
There is provided a resin composition with which the desmear properties can be enhanced, a cured product thereof can be made low in dielectric loss tangent, and the cured product can be made high in heat resistance. The resin composition according to the present invention includes a compound having a structure represented by formula (1), a structure in which a substituent is bonded to a benzene ring in the structure represented by formula (1), a structure represented by formula (2), a structure in which a substituent is bonded to a benzene ring in the structure represented by formula (2), a structure represented by formula (3), a structure in which a substituent is bonded to a benzene ring in the structure represented by formula (3), a structure represented by formula (4), or a structure in which a substituent is bonded to a benzene ring in the structure represented by formula (4) and an active ester compound and the structure represented by the formula (1), (2), (3), or (4) has a phenylene group or a naphthylene group and a hetero atom, a group in which a hydrogen atom is bonded to a hetero atom, or a carbonyl group.
Resist underlayer film-forming composition
The present invention provides a novel resist underlayer film-forming composition capable of forming a resist underlayer film that has etching resistance and excellent embeddability in a surface having concave portions and/or convex portions. A resist underlayer film-forming composition comprising a polymer having a structural unit represented by formula (1) or formula (2): ##STR00001##
(wherein X is an arylene group, n is 1 or 2, and R.sub.1, R.sub.2, R.sub.3, and R.sub.4 are each independently a hydrogen atom, a hydroxy group, a C.sub.1-3 alkyl group, or a phenyl group), and a solvent.
Resist underlayer film-forming composition
The present invention provides a novel resist underlayer film-forming composition capable of forming a resist underlayer film that has etching resistance and excellent embeddability in a surface having concave portions and/or convex portions. A resist underlayer film-forming composition comprising a polymer having a structural unit represented by formula (1) or formula (2): ##STR00001##
(wherein X is an arylene group, n is 1 or 2, and R.sub.1, R.sub.2, R.sub.3, and R.sub.4 are each independently a hydrogen atom, a hydroxy group, a C.sub.1-3 alkyl group, or a phenyl group), and a solvent.
Isatin copolymers having intrinsic microporosity
A copolymer including a repeating unit represented by (I) wherein: Y is selected from: a carboxylic acid, sulfonic, phosphorous acid and phosphoric acid and their corresponding salt or ester; imino, amide, nitrile, hydrogen, hydroxyl and alkyl comprising from 1 to 6 carbon atoms; and R.sub.1, R.sub.2, R.sub.3, and R.sub.4 are independently selected from: hydrogen, alkyl groups comprising from 1 to 6 carbon atoms, and R.sub.1 and R.sub.2 may collectively form a ketone group or a 9, 9-fluorene group, and R.sub.3 and R.sub.4 may collectively form a ketone group or a 9, 9-fluorene group; R.sub.5 and R.sub.6 are independently selected from: a bond and an alkylene group comprising from 1 to 6 carbon atoms; R.sub.7 is selected from: hydrogen, alkyl, aryl, aralkyl and heteroaryl groups comprising from 1 to 8 carbon atoms which may be unsubstituted or substituted with carboxylic acid, sulfonic acid and phosphoric acid and their corresponding salt or ester, imino and amide; and X and X are independently selected from: a carboxylic acid, sulfonic acid and phosphoric acid and their corresponding salt or ester, imino and amide; nitrile, hydrogen, alkyl having from 1 to 6 carbon atoms and alkoxy having from 1 to 6 carbon atoms. ##STR00001##
Isatin copolymers having intrinsic microporosity
A copolymer including a repeating unit represented by (I) wherein: Y is selected from: a carboxylic acid, sulfonic, phosphorous acid and phosphoric acid and their corresponding salt or ester; imino, amide, nitrile, hydrogen, hydroxyl and alkyl comprising from 1 to 6 carbon atoms; and R.sub.1, R.sub.2, R.sub.3, and R.sub.4 are independently selected from: hydrogen, alkyl groups comprising from 1 to 6 carbon atoms, and R.sub.1 and R.sub.2 may collectively form a ketone group or a 9, 9-fluorene group, and R.sub.3 and R.sub.4 may collectively form a ketone group or a 9, 9-fluorene group; R.sub.5 and R.sub.6 are independently selected from: a bond and an alkylene group comprising from 1 to 6 carbon atoms; R.sub.7 is selected from: hydrogen, alkyl, aryl, aralkyl and heteroaryl groups comprising from 1 to 8 carbon atoms which may be unsubstituted or substituted with carboxylic acid, sulfonic acid and phosphoric acid and their corresponding salt or ester, imino and amide; and X and X are independently selected from: a carboxylic acid, sulfonic acid and phosphoric acid and their corresponding salt or ester, imino and amide; nitrile, hydrogen, alkyl having from 1 to 6 carbon atoms and alkoxy having from 1 to 6 carbon atoms. ##STR00001##
COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, AND CIRCUIT PATTERN FORMATION METHOD
The present invention employs a compound represented by the following formula (0):
##STR00001## wherein R.sup.Y is a linear, branched, or cyclic alkyl group of 1 to 30 carbon atoms or an aryl group of 6 to 30 carbon atoms; R.sup.Z is an N-valent group of 1 to 60 carbon atoms or a single bond; each R.sup.T is independently an alkyl group of 1 to 30 carbon atoms optionally having a substituent, an aryl group of 6 to 40 carbon atoms optionally having a substituent, an alkenyl group of 2 to 30 carbon atoms optionally having a substituent, an alkoxy group of 1 to 30 carbon atoms optionally having a substituent, a halogen atom, a nitro group, an amino group, a cyano group, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, wherein the alkyl group, the alkenyl group, and the aryl group each optionally contain an ether bond, a ketone bond, or an ester bond, wherein at least one R.sup.T is a hydroxy group or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; X is an oxygen atom, a sulfur atom, or not a crosslink; each m is independently an integer of 0 to 9, wherein at least one m is an integer of 1 to 9; N is an integer of 1 to 4, wherein when N is an integer of 2 or larger, N structural formulas within the parentheses [ ] are the same or different; and each r is independently an integer of 0 to 2.
COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, AND CIRCUIT PATTERN FORMATION METHOD
The present invention employs a compound represented by the following formula (0):
##STR00001## wherein R.sup.Y is a linear, branched, or cyclic alkyl group of 1 to 30 carbon atoms or an aryl group of 6 to 30 carbon atoms; R.sup.Z is an N-valent group of 1 to 60 carbon atoms or a single bond; each R.sup.T is independently an alkyl group of 1 to 30 carbon atoms optionally having a substituent, an aryl group of 6 to 40 carbon atoms optionally having a substituent, an alkenyl group of 2 to 30 carbon atoms optionally having a substituent, an alkoxy group of 1 to 30 carbon atoms optionally having a substituent, a halogen atom, a nitro group, an amino group, a cyano group, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, wherein the alkyl group, the alkenyl group, and the aryl group each optionally contain an ether bond, a ketone bond, or an ester bond, wherein at least one R.sup.T is a hydroxy group or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; X is an oxygen atom, a sulfur atom, or not a crosslink; each m is independently an integer of 0 to 9, wherein at least one m is an integer of 1 to 9; N is an integer of 1 to 4, wherein when N is an integer of 2 or larger, N structural formulas within the parentheses [ ] are the same or different; and each r is independently an integer of 0 to 2.
Resist underlayer film composition, patterning process, and compound
The present invention provides a resist underlayer film composition for lithography, containing a compound having an indenofluorene structure. This resist underlayer film composition is excellent in filling property, generates little outgas, and has high heat resistance.