C08G8/04

RESIST UNDERLAYER COMPOSITIONS AND PATTERN FORMATION METHODS USING SUCH COMPOSITIONS

A resist underlayer composition including a polymer having a polymer backbone and a substituted or unsubstituted fullerene group pendant to the polymer backbone, and a solvent in an amount of from 50 to 99.9 weight % based on the total resist underlayer composition.

NOVEL ALKYLPHENOL RESINS AND A METHOD OF PREPARING THEREOF
20200369821 · 2020-11-26 ·

Compositions, methods, and resins using alkyl aldehydes and phenols are provided herein. In one embodiment, a composition comprising an alkylphenol resin can be prepared by condensing at least one phenolic monomer selected from the group consisting of phenol, cresol, resorcinol, xylenol, ethyl phenol, alkylresorcinols, and combinations thereof; and at least one alkyl aldehyde having from 5 to 12 carbon atom alkyl groups. The alkylphenol resins of the application are free of octylphenol or nonylphenol monomers. In one embodiment, the alkylphenol resins may be prepared using formaldehyde, and alternatively, in another embodiment, the alkylphenol resins may be prepared without the use of formaldehyde. The process to make these new alternative alkylphenol resins is a cost effective process and easy to scale-up.

NOVEL ALKYLPHENOL RESINS AND A METHOD OF PREPARING THEREOF
20200369821 · 2020-11-26 ·

Compositions, methods, and resins using alkyl aldehydes and phenols are provided herein. In one embodiment, a composition comprising an alkylphenol resin can be prepared by condensing at least one phenolic monomer selected from the group consisting of phenol, cresol, resorcinol, xylenol, ethyl phenol, alkylresorcinols, and combinations thereof; and at least one alkyl aldehyde having from 5 to 12 carbon atom alkyl groups. The alkylphenol resins of the application are free of octylphenol or nonylphenol monomers. In one embodiment, the alkylphenol resins may be prepared using formaldehyde, and alternatively, in another embodiment, the alkylphenol resins may be prepared without the use of formaldehyde. The process to make these new alternative alkylphenol resins is a cost effective process and easy to scale-up.

COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD AND METHOD FOR PURIFYING RESIN
20200361843 · 2020-11-19 ·

A compound represented by the following formula (1).

##STR00001##

(In the formula (1), A is a group containing a heteroatom; R.sup.1 is a 2n-valent group having 1 to 30 carbon atoms and optionally having a substituent; R.sup.2 to R.sup.5 are each independently a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms and optionally having a substituent, an aryl group having 6 to 30 carbon atoms and optionally having a substituent, an alkenyl group having 2 to 30 carbon atoms and optionally having a substituent, an alkynyl group having 2 to 30 carbon atoms and optionally having a substituent, an alkoxy group having 1 to 30 carbon atoms and optionally having a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a crosslinkable group, a dissociation group, a thiol group or a hydroxy group, wherein the alkyl group, the aryl group, the alkenyl group and the alkoxy group each optionally contain an ether bond, a ketone bond or an ester bond and at least one R.sup.4 and/or at least one R.sup.5 is a hydroxy group and/or a thiol group; m.sup.2 and m.sup.3 are each independently an integer of 0 to 8; m.sup.4 and m.sup.5 are each independently an integer of 0 to 9; n is an integer of 1 to 4; and p.sup.2 to p.sup.5 are each independently an integer of 0 to 2.)

Coating composition for use with an overcoated photoresist

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a crosslinker component that comprises a structure of the following Formula (I): ##STR00001##

Coating composition for use with an overcoated photoresist

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a crosslinker component that comprises a structure of the following Formula (I): ##STR00001##

Method for producing thermosetting phenolic resins and phenolic resins obtainable by the method

A method for producing thermosetting phenolic resins includes the step of reacting a polycondensable phenolic compound with 5-hydroxymethylfurfural (HMF) under conditions leading to the formation of polycondensation products. The HMF includes at least one HMF oligomer, and the reaction step is carried out at pH values greater than 7 for more than 60 minutes. Further, thermosetting phenolic resins may be used for producing a wood composite material.

Method for producing thermosetting phenolic resins and phenolic resins obtainable by the method

A method for producing thermosetting phenolic resins includes the step of reacting a polycondensable phenolic compound with 5-hydroxymethylfurfural (HMF) under conditions leading to the formation of polycondensation products. The HMF includes at least one HMF oligomer, and the reaction step is carried out at pH values greater than 7 for more than 60 minutes. Further, thermosetting phenolic resins may be used for producing a wood composite material.

Method for producing polymer for electronic material and polymer for electronic material obtained by the production method

Provided is a method for producing a polymer for an electronic material having a low content of metal ion impurities and a polymer for an electronic material obtained by such method. The method for producing a polymer for an electronic material according to the present invention comprises a polymerization step of obtaining a polymer by polymerizing a monomer(s) and a purification step of adding a strong acid having 0 or less pKa to the polymer solution and subsequently performing an ion exchange treatment to reduce the concentration of the metal ion impurities.

Method for producing polymer for electronic material and polymer for electronic material obtained by the production method

Provided is a method for producing a polymer for an electronic material having a low content of metal ion impurities and a polymer for an electronic material obtained by such method. The method for producing a polymer for an electronic material according to the present invention comprises a polymerization step of obtaining a polymer by polymerizing a monomer(s) and a purification step of adding a strong acid having 0 or less pKa to the polymer solution and subsequently performing an ion exchange treatment to reduce the concentration of the metal ion impurities.