A method for producing an ablative resin by carrying out a reduction reaction for the reduction of a compound of formula A, followed by a polymerization reaction, formula A being the following: ##STR00001##

An aromatic polyphenol derivative which comprises at least one aromatic ring bearing at least two OZ groups in the meta position relative to one another, the two positions ortho to at least one of the OZ groups being unsubstituted, is used for the manufacture of a phenol-aldehyde resin for reinforcing a rubber composition. Each OZ group represents an O((CO)(R.sub.1)) group with R.sub.1 representing a hydrocarbon-based radical or a substituted hydrocarbon-based radical.

Provided are a novolac-type phenolic hydroxy group-containing resin having excellent developability, heat resistance, and dry etching resistance and a resist film. The novolac-type phenolic hydroxy group-containing resin includes, as a repeating unit, a structural moiety (I) represented by Structural Formula (1):

##STR00001##

wherein Ar represents an arylene group; R.sup.1's each independently represent any one of a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aralkyl group, and a halogen atom; and m's each independently represent an integer of 1 to 3, or a structural moiety (II) represented by Structural Formula (2):

##STR00002##

wherein Ar represents an arylene group; R.sup.1's each independently represent any one of a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aralkyl group, and a halogen atom; and m's each independently represent an integer of 1 to 3.

In lithography, a composition comprising a novolak resin comprising recurring units derived from a phenolphthalein, Phenol Red, Cresolphthalein, Cresol Red, or Thymolphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO.sub.2 substrates.

In lithography, a composition comprising a novolak resin comprising recurring units derived from a phenolphthalein, Phenol Red, Cresolphthalein, Cresol Red, or Thymolphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO.sub.2 substrates.

The present disclosure generally relates to adhesive compositions, adhesive articles including the adhesive compositions, methods of making the adhesive compositions and articles, and methods of using the adhesive compositions and articles. The adhesive compositions of the present disclosure include a thermoplastic phenolic resin made from the reaction of (1) alkyl phenol (e.g., butyl- or octyl- or -nonyl) and formaldehyde; or (2) alkyl phenol (e.g., butyl- or octyl-) and acetaldehyde; or (3) alkyl phenol (e.g., butyl- or octyl-) and acetylene. The present disclosure also generally relates to adhesive articles including these adhesive compositions. The inventors of the present disclosure found that such adhesive articles exhibit excellent adhesion to architectural coatings with including low or no VOCs, deep base formulations, and/or formulations including primer in various conditions, including, for example, high humidity.

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

##STR00001##

A curable composition and a permanent resist film made using this curable composition are provided. The composition dissolves well in solvents, gives coatings superior in alkali developability, thermal decomposition resistance, light sensitivity, and resolution, and is particularly suitable for the formation of permanent resist films. Specifically, the composition is a curable composition for permanent resist films and contains a phenolic hydroxyl-containing compound (A) that has a molecular structure represented by structural formula (1): ##STR00001##
(where R.sup.1 is hydrogen, alkyl, or aryl, and n is an integer of 2 to 10; R.sup.2 is alkyl, alkoxy, aryl, aralkyl, or halogen, and m is an integer of 0 to 4; if m is 2 or more, the plurality of R.sup.2s may be the same or different from one another, and may be bonded to either of the two aromatic rings in the naphthylene structure) and a photosensitizer (B1) or curing agent (B2).

A curable composition and a permanent resist film made using this curable composition are provided. The composition dissolves well in solvents, gives coatings superior in alkali developability, thermal decomposition resistance, light sensitivity, and resolution, and is particularly suitable for the formation of permanent resist films. Specifically, the composition is a curable composition for permanent resist films and contains a phenolic hydroxyl-containing compound (A) that has a molecular structure represented by structural formula (1): ##STR00001##
(where R.sup.1 is hydrogen, alkyl, or aryl, and n is an integer of 2 to 10; R.sup.2 is alkyl, alkoxy, aryl, aralkyl, or halogen, and m is an integer of 0 to 4; if m is 2 or more, the plurality of R.sup.2s may be the same or different from one another, and may be bonded to either of the two aromatic rings in the naphthylene structure) and a photosensitizer (B1) or curing agent (B2).