The resist material according to the present invention contains a compound represented by the following formula (1): ##STR00001## wherein each R.sup.0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

The resist material according to the present invention contains a compound represented by the following formula (1): ##STR00001## wherein each R.sup.0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): ##STR00001##
wherein, each R.sup.0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.

The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): ##STR00001##
wherein, each R.sup.0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.

A hardmask composition, a hardmask layer including a cured product of the hardmask composition, and a method of forming patterns using the hardmask layer including a cured product of the hardmask composition, the hardmask composition including a compound represented by Chemical Formula 1, below; and a solvent,

##STR00001##

A hardmask composition, a hardmask layer including a cured product of the hardmask composition, and a method of forming patterns using the hardmask layer including a cured product of the hardmask composition, the hardmask composition including a compound represented by Chemical Formula 1, below; and a solvent,

##STR00001##

The present invention is a compound represented by the following general formula (1).

##STR00001##

The resist composition of the present invention contains one or more selected from compounds represented by specific formulae and resins obtained using these as monomers.

The resist material according to the present invention contains a compound represented by the following formula (1):

##STR00001##

wherein each R.sup.0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1):

##STR00001##

wherein, each R.sup.0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.