The dental restorative material of the present invention is a dental restorative material that contains a resin matrix and an inorganic filler in an amount of 25 to 1,000 parts by mass per 100 parts by mass of the resin matrix, and in the dental restorative material, the resin matrix contains a polyurethane resin, and the inorganic filler has an average particle diameter of 0.001 to 100 μm. According to the present invention, a dental restorative material that has a high bending strength and a high surface hardness, and is excellent in transparency and cutting workability, and a resin material for dental cutting work containing the same can be provided.

The present disclosure relates to a curing agent, an adhesive composition for a semiconductor device containing the curing agent, the adhesive composition exhibiting excellent adhesive strength and having excellent reliability because of being inhibited from cracking, an adhesive film for a semiconductor device, and a semiconductor package including the same.

The present disclosure relates to a curing agent, an adhesive composition for a semiconductor device containing the curing agent, the adhesive composition exhibiting excellent adhesive strength and having excellent reliability because of being inhibited from cracking, an adhesive film for a semiconductor device, and a semiconductor package including the same.

The present disclosure relates to an unsaturated group-containing resin, a method of preparing the same, and a composition including the same, wherein the unsaturated group-containing resin includes an oligomer represented by Chemical Formula 1 and an alkali metal ion, wherein an amount of the oligomer with n being 0 in Chemical Formula 1 is 80 wt % or less with respect to the total weight of the resin, and an amount of the alkali metal ion is 1 ppm to 30 ppm.

##STR00001##

In Chemical Formula 1, R.sub.1 to R.sub.3 and n are as described in the present specification.

Boron nitride nanotube (BNNT)-polymide (PI) and poly-xylene (PX) nano-composites, in the form of thin films, powder, and mats may be useful as layers in electronic circuits, windows, membranes, and coatings. The processes described chemical vapor deposition (CVD) processes for coating the BNNTs with polymeric material, specifically PI and PX. The processes rely on surface adsorption of polymeric material onto BNNTs as to modify their surface properties or create a uniform dispersion of polymer around nanotubes. The resulting functionalized BNNTs have numerous valuable applications.

The invention provides a photoinduced-nonlinear-expansion coordination polymer and preparation method thereof. The coordination polymer has a chemical formula of [Zn(iba)(tkpvb)Cl].sub.n1, wherein iba represents p-iodobenzoate, tkpvb represents 1,2,4,5-tetrakis((E)-2-(4-pyridyl)vinyl)benzene, and n=3000-60000; and crystallographic parameters of: (1) crystal system: monoclinic system; (2) space group: Cc; (3) a = 28.6156(16) Å, b = 7.2901(4) Å, c = 21.5157(13) Å, β = 127.430(4)°, and V = 3574.2(4) Å.sup.3; (4) Z = 4; and (5) F(000) = 1680, R.sub.1 = 0.1363, wR.sub.2 = 0.3788, and GOF = 1.620; wherein iba represents p-iodobenzoate, tkpvb represents 1,2,4,5-tetrakis((E)-2-(4-pyridyl)vinyl)benzene, and n1=3000-60000. The preparation method of the coordination polymer of the present invention is simple, and has mild reaction conditions, and fast light conversion rate. Moreover, the coordination polymer undergoes an addition reaction, exhibits the photoinduced nonlinear expansion performance of the material, and affords a corresponding isomeric compound under the irradiation of light of various wavelengths.

The invention provides a photoinduced-nonlinear-expansion coordination polymer and preparation method thereof. The coordination polymer has a chemical formula of [Zn(iba)(tkpvb)Cl].sub.n1, wherein iba represents p-iodobenzoate, tkpvb represents 1,2,4,5-tetrakis((E)-2-(4-pyridyl)vinyl)benzene, and n=3000-60000; and crystallographic parameters of: (1) crystal system: monoclinic system; (2) space group: Cc; (3) a = 28.6156(16) Å, b = 7.2901(4) Å, c = 21.5157(13) Å, β = 127.430(4)°, and V = 3574.2(4) Å.sup.3; (4) Z = 4; and (5) F(000) = 1680, R.sub.1 = 0.1363, wR.sub.2 = 0.3788, and GOF = 1.620; wherein iba represents p-iodobenzoate, tkpvb represents 1,2,4,5-tetrakis((E)-2-(4-pyridyl)vinyl)benzene, and n1=3000-60000. The preparation method of the coordination polymer of the present invention is simple, and has mild reaction conditions, and fast light conversion rate. Moreover, the coordination polymer undergoes an addition reaction, exhibits the photoinduced nonlinear expansion performance of the material, and affords a corresponding isomeric compound under the irradiation of light of various wavelengths.

Disclosed herein are ladder polymers comprising fused aromatic and non-aromatic rings. Also disclosed are the manufacture and use of these ladder polymers, e.g., in separation membranes, such as membrane for gas separation.

Disclosed herein are ladder polymers comprising fused aromatic and non-aromatic rings. Also disclosed are the manufacture and use of these ladder polymers, e.g., in separation membranes, such as membrane for gas separation.

A resin has a structure defined by Formula (I)

##STR00001##

wherein: (a) each R.sub.5 is independently a methylene group (CH.sub.2), or a methylene group substituted with one or more —H, —CH.sub.3, or halogen functionalities; (b) each R.sub.6 is independently a bond or a straight-chain or branched, linear or cyclic, saturated or unsaturated, substituted or unsubstituted, aliphatic or aromatic group having between 1 and 2 carbon atoms; (c) each X is independently a functionality possessing at least one non-aromatic alkene or alkyne moiety; (d) each Z is independently either H or X; (e) each Z is independently either H or X, and each p is independently an integer from 1-4; (f) each w is independently 0, or an integer greater than or equal to 1, and (i) when w is 0, the bracket region represents a bond and n is 0, or an integer greater than or equal to 1; and (ii) when n is 0, the bracket region represents a bond. The resin is especially well suited for use in a base station, circuit board, server, router, radome or satellite structure, as well as such processes as digital light printing (DLP), continuous liquid interface printing (CLIP), and Stereolithography (SL).