A polymer and a light-emitting device employing the same are provided. The polymer includes a first repeat unit with a structure represented by Formula (I):

##STR00001##

wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification. At least one of A.sup.1, A.sup.2, and A.sup.3 is not hydrogen.

An organic electronic material containing a charge transport compound having at least one of the structural regions represented by formulas (1), (2) and (3) shown below. In the formulas, Ar represents an arylene group or heteroarylene group of 2 to 30 carbon atoms, a represents an integer of 1 to 6, b represents an integer of 2 to 6, c represents an integer of 2 to 6, and X represents a substituted or unsubstituted polymerizable functional group.
—Ar—O—(CH.sub.2).sub.a—O—CH.sub.2—X  (1)
—Ar—(CH.sub.2).sub.b—O—CH.sub.2—X  (2)
—Ar—O—(CH.sub.2).sub.c—X  (3)

An organic electronic material containing a charge transport compound having at least one of the structural regions represented by formulas (1), (2) and (3) shown below. In the formulas, Ar represents an arylene group or heteroarylene group of 2 to 30 carbon atoms, a represents an integer of 1 to 6, b represents an integer of 2 to 6, c represents an integer of 2 to 6, and X represents a substituted or unsubstituted polymerizable functional group.
—Ar—O—(CH.sub.2).sub.a—O—CH.sub.2—X  (1)
—Ar—(CH.sub.2).sub.b—O—CH.sub.2—X  (2)
—Ar—O—(CH.sub.2).sub.c—X  (3)

Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X.sup.1 represents —N(R.sup.1)—; X.sup.2 represents —N(R.sup.2)—; X.sup.3 represents —CH(R.sup.3)—; X.sup.4 represents —CH(R.sup.4)— etc.; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R.sup.5, R.sup.6, R.sup.9, and R.sup.10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R.sup.7 and R.sup.8 represent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X.sup.1 represents —N(R.sup.1)—; X.sup.2 represents —N(R.sup.2)—; X.sup.3 represents —CH(R.sup.3)—; X.sup.4 represents —CH(R.sup.4)— etc.; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R.sup.5, R.sup.6, R.sup.9, and R.sup.10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R.sup.7 and R.sup.8 represent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

Polymer embodiments comprising nanohoop-containing polymer backbones are described, along with methods of making and using the same. The polymer embodiments exhibit unique radial and linear conjugation and can be used in a variety of devices, such as electronic and/or optoelectronic devices.

Polymer embodiments comprising nanohoop-containing polymer backbones are described, along with methods of making and using the same. The polymer embodiments exhibit unique radial and linear conjugation and can be used in a variety of devices, such as electronic and/or optoelectronic devices.

The present invention discloses an organic polymer having an asymmetric structure, a preparation method thereof and a use as a photoelectric material thereof. The organic polymer with an asymmetric structure is obtained by polymerization after performing Stille coupling reaction between an electron-donating unit D and an electron-withdrawing unit A in the presence of a solvent and a catalyst. The compound of the present application has good heat stability, controllable absorption level, and is suitable for the preparation of hole transport materials of high-performance perovskite solar cells with high efficiency, flexibility, good stability and a large area as well as donor materials of organic solar cells.

The present invention discloses an organic polymer having an asymmetric structure, a preparation method thereof and a use as a photoelectric material thereof. The organic polymer with an asymmetric structure is obtained by polymerization after performing Stille coupling reaction between an electron-donating unit D and an electron-withdrawing unit A in the presence of a solvent and a catalyst. The compound of the present application has good heat stability, controllable absorption level, and is suitable for the preparation of hole transport materials of high-performance perovskite solar cells with high efficiency, flexibility, good stability and a large area as well as donor materials of organic solar cells.

The present invention relates to the field of hydrogen energy, and more particularly to an anion-conducting polyelectrolyte comprising an amide group, a preparation method and application thereof. The method includes: polymerizing aromatic hydrocarbons and ketone comprising amide group by superacid catalysis, forming a membrane by a casting method, performing the membrane prepared under alkaline conditions to obtain the anion-conducting polyelectrolytes comprising amide group. The anion-conducting polyelectrolytes obtained have good solubility and excellent stability. It is a kind of high molecular polymer with excellent alkali stability with an amide structure on the backbone. After alkaline treatment, the polymer not only has high hydroxide conductivity, good mechanical properties, and thermal stability but also has excellent alkali stability and excellent performance of water electrolysis.