A raw material of a coating material for secondary battery separators contains a thermosetting condensation resin.

A raw material of a coating material for secondary battery separators contains a thermosetting condensation resin.

A TPC-OTBS n-hexane solution is added to a mixture of TPC-OSO.sub.2F, DMF, and DBU and allowed to stand to produce a crosslinked solvent gel; the crosslinked solvent gel is added to methanol, stirred, and dried to produce the porous crosslinked material. The gel acquired can be prepared into a pore-rich solid porous organic polymer material by means of solvent exchange. SEM and TEM are used to characterize the surface and internal morphologies of the solid material, and the porous morphology thereof is discovered, with large pores being the majority. Infrared and nuclear magnetic resonance are used to characterize the structure of a crosslinked polysulfate; the complete reaction of a sulfuryl fluoride group is proven by means of solid-state fluorine nuclear magnetic resonance spectroscopy and XPS element analysis; and the porous structure of the crosslinked polysulfate allows same to be provided with improved application prospect in terms of adsorption.

The present invention provides novel nanostructures comprising solution of PPSU.sub.20. Methods of preparing the novel PPSU nanostructures, and applications of such nanostructures are also provided.

The present invention provides novel nanostructures comprising solution of PPSU.sub.20. Methods of preparing the novel PPSU nanostructures, and applications of such nanostructures are also provided.

A method for manufacturing a semiconductor structure includes: forming first conducting portions that are spaced apart from each other on a base structure; forming isolation elements, each of which includes a dielectric lower portion and an etching-resistant upper portion covering the dielectric lower portion, the etching-resistant upper portion being made of an etching-resistant material different from a dielectric material of the dielectric lower portion, each of the isolation elements being isolated and exposed from two adjacent ones of the first conducting portions; sequentially forming an etch stop layer and an interlayer dielectric over the first conducting portions and the isolation elements; forming a cavity which extends through the etch stop layer and the interlayer dielectric, and which exposes one of the first conducting portions; and filling the cavity with a second conducting portion.

A method for manufacturing a semiconductor structure includes: forming first conducting portions that are spaced apart from each other on a base structure; forming isolation elements, each of which includes a dielectric lower portion and an etching-resistant upper portion covering the dielectric lower portion, the etching-resistant upper portion being made of an etching-resistant material different from a dielectric material of the dielectric lower portion, each of the isolation elements being isolated and exposed from two adjacent ones of the first conducting portions; sequentially forming an etch stop layer and an interlayer dielectric over the first conducting portions and the isolation elements; forming a cavity which extends through the etch stop layer and the interlayer dielectric, and which exposes one of the first conducting portions; and filling the cavity with a second conducting portion.

Provided is an electrically conductive elastomer with high stretchability and high durability. A method of synthesizing an electrically conductive elastomer includes (a) preparing a eutectic solvent by mixing quaternary ammonium salt and organic acid, and (b) adding and blending the eutectic solvent with poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), a photocuring agent, and a crosslinker and performing photopolymerization.

Provided is an electrically conductive elastomer with high stretchability and high durability. A method of synthesizing an electrically conductive elastomer includes (a) preparing a eutectic solvent by mixing quaternary ammonium salt and organic acid, and (b) adding and blending the eutectic solvent with poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), a photocuring agent, and a crosslinker and performing photopolymerization.