Novel branched oligoarylsilanes of general formula (I) ##STR00001##
A method of preparation of branched oligoarylsilanes is that a compound of general formula (III)
Y-Q.sub.k-SiAr.sub.n—R).sub.3  (III),
where Y stands for a residue of boronic acid or its ester or Br or I, reacts under Suzuki conditions with a reagent of general formula (IV)
A-X.sub.m-A  (IV),
where A stands for: Br or I, provided that Y stands for a residue of boronic acid or its ester; or a residue of boronic acid or its ester, provided that Y stands for Br or I. A technical result is preparation of novel compounds, featured by a high luminescence efficiency, efficient intramolecular energy transfer from some molecular fragments to others, and an increased thermal stability.

Novel branched oligoarylsilanes of general formula (I) ##STR00001##
A method of preparation of branched oligoarylsilanes is that a compound of general formula (III)
Y-Q.sub.k-SiAr.sub.n—R).sub.3  (III),
where Y stands for a residue of boronic acid or its ester or Br or I, reacts under Suzuki conditions with a reagent of general formula (IV)
A-X.sub.m-A  (IV),
where A stands for: Br or I, provided that Y stands for a residue of boronic acid or its ester; or a residue of boronic acid or its ester, provided that Y stands for Br or I. A technical result is preparation of novel compounds, featured by a high luminescence efficiency, efficient intramolecular energy transfer from some molecular fragments to others, and an increased thermal stability.

A method for preparing a reaction product including an aryl-functional silane includes sequential steps (1) and (2). Step (1) is contacting, under silicon deposition conditions, (A) an ingredient including (I) a halosilane such as silicon tetrahalide and optionally (II) hydrogen (H.sub.2); and (B) a metal combination comprising copper (Cu) and at least one other metal, where the at least one other metal is selected from the group consisting of gold (Au), cobalt (Co), chromium (Cr), iron (Fe), magnesium (Mg), manganese (Mn), nickel (Ni), palladium (Pd), and silver (Ag); thereby forming a silicon alloy catalyst comprising Si, Cu and the at least one other metal. Step (2) is contacting the silicon alloy catalyst and (C) a reactant including an aryl halide under silicon etching conditions.

A method for preparing a reaction product including an aryl-functional silane includes sequential steps (1) and (2). Step (1) is contacting, under silicon deposition conditions, (A) an ingredient including (I) a halosilane such as silicon tetrahalide and optionally (II) hydrogen (H.sub.2); and (B) a metal combination comprising copper (Cu) and at least one other metal, where the at least one other metal is selected from the group consisting of gold (Au), cobalt (Co), chromium (Cr), iron (Fe), magnesium (Mg), manganese (Mn), nickel (Ni), palladium (Pd), and silver (Ag); thereby forming a silicon alloy catalyst comprising Si, Cu and the at least one other metal. Step (2) is contacting the silicon alloy catalyst and (C) a reactant including an aryl halide under silicon etching conditions.

1. The present invention relates to a method for the purification of halogenated oligosilanes as a pure compound or mixture of compounds each having at least one direct Si—Si bond, the substituents thereof being exclusively halogen or halogen and hydrogen, and the composition thereof being an atom ratio of substituent:silicon of at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and isolation of the halogenated oligosilane with improved purity.

2.1. In the prior art, halogenated monosilanes such as HSiCl.sub.3 are purified by treatment with preferably polymeric organic compounds containing amino groups, and are separated out from these mixtures. This method cannot be used for halogenated oligosilanes because of the contained amino groups, since secondary reactions would lead to decomposition of the products. The new method should provide the desired products in high yield and purity without amino groups being used.

2.2. The purification of the halogenated oligosilanes is carried out in the presence of special purification agents, which convert contaminations such as, for example, FeCl.sub.2 into an insoluble and/or less volatile form. A separation of the products of completes the purification This method gives a high yield and avoids the problems associated with the prior art, such as, for example, long distillation times.

2.3. The method is suitable for the purification of, for example, Si.sub.2Cl.sub.6, Si.sub.3Cl.sub.8, Si.sub.4Cl.sub.10, and higher homologs. These find application, for example, in the deposition of silicon nitride layers in CVD processes.

1. The present invention relates to a method for the purification of halogenated oligosilanes as a pure compound or mixture of compounds each having at least one direct Si—Si bond, the substituents thereof being exclusively halogen or halogen and hydrogen, and the composition thereof being an atom ratio of substituent:silicon of at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and isolation of the halogenated oligosilane with improved purity.

2.1. In the prior art, halogenated monosilanes such as HSiCl.sub.3 are purified by treatment with preferably polymeric organic compounds containing amino groups, and are separated out from these mixtures. This method cannot be used for halogenated oligosilanes because of the contained amino groups, since secondary reactions would lead to decomposition of the products. The new method should provide the desired products in high yield and purity without amino groups being used.

2.2. The purification of the halogenated oligosilanes is carried out in the presence of special purification agents, which convert contaminations such as, for example, FeCl.sub.2 into an insoluble and/or less volatile form. A separation of the products of completes the purification This method gives a high yield and avoids the problems associated with the prior art, such as, for example, long distillation times.

2.3. The method is suitable for the purification of, for example, Si.sub.2Cl.sub.6, Si.sub.3Cl.sub.8, Si.sub.4Cl.sub.10, and higher homologs. These find application, for example, in the deposition of silicon nitride layers in CVD processes.

A method of treating a preceramic material includes providing a preceramic polycarbosilane or polycarbosiloxane material that includes a moiety Si—O-M, where Si is silicon, O is oxygen and M is at least one metal that includes at least one transition metal, and thermally converting the preceramic polycarbosilane or polycarbosiloxane that includes the moiety Si—O-M material into a ceramic material.

Low dielectric constant curable compositions include a first alkyl (meth)acrylate monomer with 12 or more carbon atoms, a crosslinking monomer, a copolymeric additive of a polycarbosilane or a polycarbosiloxane, and at least one initiator. The curable composition is solvent free and inkjet printable. Upon curing the curable composition forms a non-crystalline, optically transparent layer with a dielectric constant of less than or equal to 3.0 at 1 MegaHertz.

Disclosed is a modified preceramic polymer having a polymer backbone consisting of silicon or a combination of silicon and carbon; and a pendant modifier bonded to the backbone wherein the modifier includes silicon, boron, aluminum, a transition metal, a refractory metal, or a combination thereof. The modified preceramic polymer can be used to form a ceramic matrix composite.

Disclosed is a modified preceramic polymer having a polymer backbone consisting of silicon or a combination of silicon and carbon; and a pendant modifier bonded to the backbone wherein the modifier includes silicon, boron, aluminum, a transition metal, a refractory metal, or a combination thereof. The modified preceramic polymer can be used to form a ceramic matrix composite.