The present invention relates to an organic silicone resin composition and a prepreg, a laminate, and an aluminum substrate that use the composition. The organic silicone resin composition comprises in terms of parts by weight: 100 parts of a condensation-type silicone resin, 0.0001-2 parts of a catalyst, and 0.001-10 parts of an additive. The organic silicone resin composition has the advantages of high heat resistance, halogen-free and phosphorus-free flame retardancy, improved peel strength with copper foil, and low coefficient of expansion, and is applicable in manufacturing the pre-preg, the laminate, and the aluminum substrate for used in a high-performance printed circuit.

Shelf-stable, rapid crosslinking, “all-in-one” pastes useful as “inks” in additive manufacturing are provided. These pastes exhibit desirable rheological flow properties and crosslinking upon exposure to UV light. The pastes are based on vinylsilyl-functionalized, completely amorphous, linear terpolysiloxanes containing predominantly dimethylsiloxy-repeat units with small amounts of diphenylsiloxy-, methylphenylsiloxy-, diethylsiloxy-, and/or methyltrifluoroalkylsiloxy-crystallization disruptors. The base polymers are preferably compounded with a trimethylsilylated-hydrophobic silica filler, thixotropic flow agent, hydrosilyl-functionalized oligomeric crosslinker, and a catalytic system comprising platinum(II) acetylacetonate or trimethyl(methylcyclopentadienyl)-platinum(IV), and diethyl azodicarboxylate.

Shelf-stable, rapid crosslinking, “all-in-one” pastes useful as “inks” in additive manufacturing are provided. These pastes exhibit desirable rheological flow properties and crosslinking upon exposure to UV light. The pastes are based on vinylsilyl-functionalized, completely amorphous, linear terpolysiloxanes containing predominantly dimethylsiloxy-repeat units with small amounts of diphenylsiloxy-, methylphenylsiloxy-, diethylsiloxy-, and/or methyltrifluoroalkylsiloxy-crystallization disruptors. The base polymers are preferably compounded with a trimethylsilylated-hydrophobic silica filler, thixotropic flow agent, hydrosilyl-functionalized oligomeric crosslinker, and a catalytic system comprising platinum(II) acetylacetonate or trimethyl(methylcyclopentadienyl)-platinum(IV), and diethyl azodicarboxylate.

Organopolysiloxane emulsions having improved release properties when employed in die casting, contain an organopolysiloxane with long chain alkyl groups and/or aryl groups, and a partially hydrophobicized silica as an emulsifying agent.

Branched organopolysiloxanes are prepared from alkoxysilanes and polydiorganosiloxanes over two stages by basic equilibration and subsequent acid-catalyzed reaction with water to the desired degree of condensation, wherein the entire process does not require the use of additional organic solvent, no wastewater is generated and the process is particularly suitable for the controlled production of so-called DT resins.

The present invention relates to a semiconductor nanocrystal-siloxane composite resin composition and a preparation method thereof, and more specifically to a semiconductor nanocrystal-siloxane composite resin composition in which semiconductor nanocrystals are dispersed and bonded to a siloxane composite resin obtained by condensation reaction of a mixture of one or more organoalkoxysilanes or organosilanediol, and a preparation method thereof. The cured product of the semiconductor nanocrystal-siloxane resin composition of the present invention can be prepared as a coating, a film, a flake, etc., and the inherent characteristics of the semiconductor nanocrystal are maintained in a high temperature and high humidity environment and the reliability of the application devices is improved.

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)   (1)

A composition for a silicon-containing resist underlying film and for forming a resist underlying film that can be removed by a conventional method employing dry etching, but also by a method employing wet etching using a chemical liquid in a step for processing a semiconductor substrate or the like; and a composition for forming a resist underlying film for lithography and for forming a resist underlying film that has excellent storage stability and produces less residue in a dry etching step. A composition for forming a resist underlying film, the composition including a hydrolysis condensate of a hydrolysable silane mixture containing an alkyltrialkoxy silane and a hydrolysable silane of formula (1), wherein the contained amount of the alkyltrialkoxy silane in the mixture is 0 mol % or more but less than 40 mol % with respect to the total amount by mole of all of the hydrolysable silane contained in the mixture.

Example patterning materials and pattern films are described. One example patterning material includes polysiloxane. The polysiloxane includes at least one cyclic structure formed by silicon-oxygen (Si—O) bond repetitions and an organic group connected to a Si atom in the at least one cyclic structure. A subset of Si atoms in the at least one cyclic structure are substituted by a metal element, and/or at least one organic group includes a halogen element.

A photosensitive resin composition comprising (A) a silphenylene and polyether structure—containing polymer and (B) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which has improved substrate adhesion, a pattern forming ability, crack resistance, and reliability as protective film.

Problems to be Solved: To provide a metal foil coil with a planarization film, with which an electronic device can be formed by a roll to roll process. Solution: A quick curable coating liquid for a planarization film prepared by adding into an organic solvent, with respect to 1 mol of a phenyltrialkoxysilane, 0.1 mol to 1 mol of acetic acid and 0.005 mol to 0.05 mol of organic tin as a catalyst, hydrolyzing the silane with 2 mol to 4 mol of water, then distilling away the organic solvent at a temperature of 160° C. to 210° C. under reduced pressure to yield a resin, and dissolving the resin in an aromatic hydrocarbon solvent, is coated on a metal foil coil to a film thickness of 2.0 μm to 5.0 μm. When an insulation coating is provided on a metal foil coil before a planarization film is formed, high reliability for insulation can be obtained. When a stainless steel foil provided with a reflection film is used, a highly efficient light emitting device can be obtained.