Patent classifications
C08G79/12
STABLE SOLUTIONS OF MONOALKYL TIN ALKOXIDES AND THEIR HYDROLYSIS AND CONDENSATION PRODUCTS
Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
STABLE SOLUTIONS OF MONOALKYL TIN ALKOXIDES AND THEIR HYDROLYSIS AND CONDENSATION PRODUCTS
Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
ORGANOTIN CONTAINING HYPERBRANCHED POLYSILOXANE STRUCTURE AND PREPARATION METHOD THEREFOR
A method of preparing an organotin containing hyperbranched polysiloxane structure includes the following steps: (1) by weight, 0.5-1.5 portions of hyperbranched polysiloxane with reactive functional groups is dissolved in 50-100 portions of an alcohol solvent, to obtain a solution A; (2) by weight, 0.5-0.9 portions of a tin-based initiator and 50-100 portions of the alcohol solvent are mixed to obtain a solution B, wherein said tin-based initiator is selected from dihydroxy butyl tin chloride, butyl tin trichloride, and dibutyl tin dichloride; and (3) dropping the solution B into the solution A at the temperature of 0 C.-60 C., reacting for 3-6 h, filtering and drying to obtain the organotin containing hyperbranched polysiloxane structure.
ORGANOTIN CONTAINING HYPERBRANCHED POLYSILOXANE STRUCTURE AND PREPARATION METHOD THEREFOR
A method of preparing an organotin containing hyperbranched polysiloxane structure includes the following steps: (1) by weight, 0.5-1.5 portions of hyperbranched polysiloxane with reactive functional groups is dissolved in 50-100 portions of an alcohol solvent, to obtain a solution A; (2) by weight, 0.5-0.9 portions of a tin-based initiator and 50-100 portions of the alcohol solvent are mixed to obtain a solution B, wherein said tin-based initiator is selected from dihydroxy butyl tin chloride, butyl tin trichloride, and dibutyl tin dichloride; and (3) dropping the solution B into the solution A at the temperature of 0 C.-60 C., reacting for 3-6 h, filtering and drying to obtain the organotin containing hyperbranched polysiloxane structure.
Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process
The present invention is a compound for forming a metal-containing film, being a polymer containing one or both of repeating units represented by the following general formula (P-1) or (P-2). This can provide: a compound for forming a metal-containing film having excellent dry etching resistance and also having high film-formability, high filling property, and a high tin content; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.
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Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process
The present invention is a compound for forming a metal-containing film, being a polymer containing one or both of repeating units represented by the following general formula (P-1) or (P-2). This can provide: a compound for forming a metal-containing film having excellent dry etching resistance and also having high film-formability, high filling property, and a high tin content; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.
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