A method of manufacturing a semiconductor device includes forming a spin on carbon layer comprising a spin on carbon composition over a semiconductor substrate. The spin on carbon layer is first heated at a first temperature to partially crosslink the spin on carbon layer. The spin on carbon layer is second heated at a second temperature to further crosslink the spin on carbon layer. An overlayer is formed over the spin on carbon layer. The second temperature is higher than the first temperature.

An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49° C.

The present specification relates to a polymer including: a unit of the following Formula 1; and a unit of the following Formula 2, a coating composition including the same, and an organic light emitting device formed by using the same:

##STR00001## wherein L1 to L6, a1 to a3, Ar1 to Ar4, R1 to R11, r1 to r5, p, and q are described herein.

The present specification relates to a polymer including: a unit of the following Formula 1; and a unit of the following Formula 2, a coating composition including the same, and an organic light emitting device formed by using the same:

##STR00001## wherein L1 to L6, a1 to a3, Ar1 to Ar4, R1 to R11, r1 to r5, p, and q are described herein.

A resist composition is provided comprising a base polymer and a quencher comprising a salt compound obtained from a nitrogen-containing compound having an iodine or bromine-substituted hydrocarbyl group (exclusive of iodine or bromine-substituted aromatic ring) bonded to the nitrogen atom via an ester bond-containing group and a compound having a 1,1,1,3,3,3-hexafluoro-2-propanol group. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer:

##STR00001##

A.sub.1, A.sub.2, L are direct bond, C4-C30 aromatic, C4-C30 alkyl, C4-C30 cycloalkyl, C4-C30 hydroxylalkyl, C4-C30 alkoxy, C4-C30 alkoxyl alkyl, C4-C30 acetyl, C4-C30 acetylalkyl, C4-C30 alkyl carboxyl, C4-C30 cycloalkyl carboxyl, C4-C30 hydrocarbon ring, C4-C30 heterocyclic, —COO—, A1 and A2 are not both direct bonds, and are unsubstituted or substituted with a halogen, carbonyl, or hydroxyl; A.sub.3 is C6-C14 aromatic, wherein A.sub.3 is unsubstituted or substituted with halogen, carbonyl, or hydroxyl; R.sub.1 is acid labile group; Ra, Rb are H or C1-C3 alkyl; R.sub.f is direct bond or C1-C5 fluorocarbon; PAG is photoacid generator; 0≤x/(x+y+z)≤1, 0≤y/(x+y+z)≤1, and 0≤z/(x+y+z)≤1.

A resist composition containing a resin component having a structural unit represented by general formula (a0-1), and a compound represented by general formula (b1). In general formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group, Va.sup.1 is a divalent hydrocarbon group, n.sub.a1 represents an integer of 0 to 2, Ya.sup.0 is a carbon atom, Xa.sup.0 is a group forming a monocyclic aliphatic hydrocarbon group together with Ya.sup.0, and Ra.sup.00 is an aromatic hydrocarbon group or a specific unsaturated hydrocarbon group. In general formula (b1), R.sup.b1 represents a cyclic hydrocarbon group, Y.sup.b1 represents a divalent linking group containing an ester bond, V.sup.b1 represents an alkylene group, a fluorinated alkylene group, or a single bond, and M.sup.m+ is an m-valent organic cation. ##STR00001##

A resist composition containing a resin component having a structural unit represented by general formula (a0-1), and a compound represented by general formula (b1). In general formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group, Va.sup.1 is a divalent hydrocarbon group, n.sub.a1 represents an integer of 0 to 2, Ya.sup.0 is a carbon atom, Xa.sup.0 is a group forming a monocyclic aliphatic hydrocarbon group together with Ya.sup.0, and Ra.sup.00 is an aromatic hydrocarbon group or a specific unsaturated hydrocarbon group. In general formula (b1), R.sup.b1 represents a cyclic hydrocarbon group, Y.sup.b1 represents a divalent linking group containing an ester bond, V.sup.b1 represents an alkylene group, a fluorinated alkylene group, or a single bond, and M.sup.m+ is an m-valent organic cation. ##STR00001##

This invention provides a resin composition for preparing an allylphenol-maleimide copolymer used for a protective film for an electronic component including: (A) an allyl group-containing phenol compound having a rigid structure; (B) an N-aromatic maleimide group-containing compound having a rigid structure; and (C) an N-aliphatic maleimide group-containing compound having a flexible structure.

This invention provides a resin composition for preparing an allylphenol-maleimide copolymer used for a protective film for an electronic component including: (A) an allyl group-containing phenol compound having a rigid structure; (B) an N-aromatic maleimide group-containing compound having a rigid structure; and (C) an N-aliphatic maleimide group-containing compound having a flexible structure.