C09D125/18

Radiation-sensitive resin composition, resist pattern-forming method, compound and method of generating acid

A radiation-sensitive resin composition contains: a polymer that includes a structural unit including an acid-labile group; and a radiation-sensitive acid generating agent. The radiation-sensitive acid generating agent includes a sulfonate anion and a radiation-sensitive cation. The sulfonate anion includes two or more rings, and an iodine atom and a monovalent group having 0 to 10 carbon atoms which includes at least one of an oxygen atom and a nitrogen atom bond to at least one of the two or more rings. The ring is preferably an aromatic ring. The radiation-sensitive acid generating agent is preferably a compound represented by formula (1). In the formula (1), A.sup.1 represents a group obtained from a compound which includes a ring having 3 to 20 ring atoms by removing (p+q+r+1) hydrogen atoms on the ring. ##STR00001##

Photoresist pattern trimming compositions and pattern formation methods

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): ##STR00001##
wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R.sub.1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R.sub.2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

Positive resist composition and patterning process
11586110 · 2023-02-21 · ·

A positive resist composition comprising a base polymer comprising recurring units (a) of an ammonium salt of a carboxylic acid having an iodized or brominated hydrocarbyl group and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group has a high sensitivity and resolution and forms a pattern of good profile with reduced edge roughness and improved dimensional uniformity.

Polymer, coating composition comprising same, and organic light emitting element using same

The present specification relates to a polymer including: a first unit represented by Formula 1; and a second unit represented by Formula 2, a coating composition including the same, and an organic light emitting device formed by using the same.

Polymer, coating composition comprising same, and organic light emitting element using same

The present specification relates to a polymer including: a first unit represented by Formula 1; and a second unit represented by Formula 2, a coating composition including the same, and an organic light emitting device formed by using the same.

Resin, resist composition and method for producing resist pattern

Disclosed is a resin including a structural unit represented by formula (I) and a structural unit represented by formula (a2-A), and a resist composition: ##STR00001## wherein R.sup.1 represents a hydrogen atom or a methyl group; L.sup.1 and L.sup.2 each represent —O— or —S—; s1 represents an integer of 1 to 3; s2 represents an integer of 0 to 3; R.sup.a50 represents a hydrogen atom, a halogen atom, or an alkyl group which may have a halogen atom; R.sup.a51 represents a halogen atom, a hydroxy group, an alkyl group, an alkoxy group, an alkylcarbonyl group or the like; A.sup.a50 represents a single bond or *—X.sup.a51-(A.sup.a52-X.sup.a52).sub.nb—; A.sup.a52 represents an alkanediyl group; X.sup.a51 and X.sup.a52 each represent —O—, —CO—O— or —O—CO—; nb represents 0 or 1; and mb represents an integer of 0 to 4.

Resist composition and patterning process

A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C.sub.1-C.sub.20 hydrocarbylene group which may contain an ester bond or ether bond and a carboxylate anion having an iodized or brominated hydrocarbyl group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

Fluorene-Based Compound, Organic Light-Emitting Device Using Same, And Manufacturing Method Therefor

The present specification relates to a fluorene-based compound of Chemical Formula 1, a coating composition including the fluorene-based compound of Chemical Formula 1, an organic light emitting device using the same, and a manufacturing method thereof

##STR00001##

wherein X1 to X4, L1, L2, R1 to R6, Ar1, Ar2, m1, m2, and n1 to n6 are described herein.

COMPOSITION FOR LITHOGRAPHY AND PATTERN FORMATION METHOD

An object of the present invention is to provide a composition for lithography capable of obtaining a film in contact with a resist layer or an underlayer film capable of forming a pattern excellent in exposure sensitivity the like. The object can be achieved by a composition for lithography containing a compound having at least one element selected from the group consisting of iodine, tellurium, and fluorine, or a resin having a constituent unit derived from the compound, wherein a total mass of the atoms in the compound is 15% by mass or more and 75% by mass or less.

COMPOSITION FOR LITHOGRAPHY AND PATTERN FORMATION METHOD

An object of the present invention is to provide a composition for lithography capable of obtaining a film in contact with a resist layer or an underlayer film capable of forming a pattern excellent in exposure sensitivity the like. The object can be achieved by a composition for lithography containing a compound having at least one element selected from the group consisting of iodine, tellurium, and fluorine, or a resin having a constituent unit derived from the compound, wherein a total mass of the atoms in the compound is 15% by mass or more and 75% by mass or less.