The copolymer includes divalent units represented by formula [CF.sub.2CF.sub.2], divalent units represented by formula: and one or more divalent units independently represented by formula: The copolymer has an SO.sub.2X equivalent weight in a range from 300 to 2000. A polymer electrolyte membrane that includes the copolymer and a membrane electrode assembly that includes such a polymer electrolyte membrane are also provided.

The copolymer includes divalent units represented by formula [CF.sub.2CF.sub.2], divalent units represented by formula: and one or more divalent units independently represented by formula: The copolymer has an SO.sub.2X equivalent weight in a range from 300 to 2000. A polymer electrolyte membrane that includes the copolymer and a membrane electrode assembly that includes such a polymer electrolyte membrane are also provided.

A low stress moisture resistant structure of semiconductor device comprises a low stress moisture resistant layer, wherein a semiconductor device is formed on a semiconductor wafer, the semiconductor device comprises at least one pad, the low stress moisture resistant layer is coated on the semiconductor device and the semiconductor wafer so that a pad top center surface of the pad is exposed. The low stress moisture resistant layer comprises a material comprising crosslinked fluoropolymer. A before-coated stress measured on the semiconductor wafer before the low stress moisture resistant layer is coated and an after-cured stress measured on the semiconductor wafer after the low stress moisture resistant layer is coated and cured define a stress difference, the stress difference is greater than or equal to 510.sup.7 dyne/cm.sup.2 and less than or equal to 510.sup.7 dyne/cm.sup.2.

A low stress moisture resistant structure of semiconductor device comprises a low stress moisture resistant layer, wherein a semiconductor device is formed on a semiconductor wafer, the semiconductor device comprises at least one pad, the low stress moisture resistant layer is coated on the semiconductor device and the semiconductor wafer so that a pad top center surface of the pad is exposed. The low stress moisture resistant layer comprises a material comprising crosslinked fluoropolymer. A before-coated stress measured on the semiconductor wafer before the low stress moisture resistant layer is coated and an after-cured stress measured on the semiconductor wafer after the low stress moisture resistant layer is coated and cured define a stress difference, the stress difference is greater than or equal to 510.sup.7 dyne/cm.sup.2 and less than or equal to 510.sup.7 dyne/cm.sup.2.

The invention relates to a fluorinated copolymers which are particularly based on vinylidene fluoride (VDF) or trifluoroethylene (TrFE) and particularly functionalized by functional and/or functionizable vinyl ethers. The invention also relates to methods for producing said copolymers, and to the applications thereof.

The invention relates to a fluorinated copolymers which are particularly based on vinylidene fluoride (VDF) or trifluoroethylene (TrFE) and particularly functionalized by functional and/or functionizable vinyl ethers. The invention also relates to methods for producing said copolymers, and to the applications thereof.

The fluoropolymer dispersion includes a copolymer having divalent units represented by formula [CF.sub.2CF.sub.2], divalent units represented by formula: [Formula should be inserted here], and one or more divalent units independently represented by formula: [Formula should be inserted here] dispersed in at least one of water or organic solvent. Methods of making the fluoropolymer dispersion and methods of using the fluoropolymer to make a at least one of a catalyst ink or polymer electrolyte membrane are also provided.

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The fluoropolymer dispersion includes a copolymer having divalent units represented by formula [CF.sub.2CF.sub.2], divalent units represented by formula: [Formula should be inserted here], and one or more divalent units independently represented by formula: [Formula should be inserted here] dispersed in at least one of water or organic solvent. Methods of making the fluoropolymer dispersion and methods of using the fluoropolymer to make a at least one of a catalyst ink or polymer electrolyte membrane are also provided.

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The present invention pertains to a fluoropolymer film comprising at least one fluoropolymer hybrid organic/inorganic composite [polymer (FH)], to a process for the manufacture of said fluoropolymer film and to uses of said fluoropolymer film in various applications, in particular in electrochemical applications.

The present invention pertains to a fluoropolymer film comprising at least one fluoropolymer hybrid organic/inorganic composite [polymer (FH)], to a process for the manufacture of said fluoropolymer film and to uses of said fluoropolymer film in various applications, in particular in electrochemical applications.