There is provided a composition for forming a protective film against an aqueous hydrogen peroxide solution, the composition comprising a resin; a compound of the following Formula (1a), (1b), or (1c):

##STR00001## (wherein X is a carbonyl group or a methylene group; 1 and m are each independently an integer of 0 to 5 so as to satisfy the relation: 31+m10; n is an integer of 2 to 5; u and v are each independently an integer of 0 to 4 so as to satisfy the relation: 3u+v8; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are each independently a hydrogen atom, a hydroxy group, a C.sub.1-10 hydrocarbon group optionally having at least one hydroxy group as a substituent and optionally having at least one double bond in a main chain, or a C.sub.6-20 aryl group optionally having at least one hydroxy group as a substituent; when R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are each the C.sub.1-10 hydrocarbon group, R.sup.1 and R.sup.2 optionally form a benzene ring together with a ring carbon atom to which R.sup.1 and R.sup.2 are bonded, R.sup.3 and R.sup.4 optionally form a benzene ring together with a ring carbon atom to which R.sup.3 and R.sup.4 are bonded, or the benzene ring optionally has at least one hydroxy group as a substituent; and j and k are each independently 0 or 1); a crosslinking agent; a crosslinking catalyst; and a solvent, wherein the amount of the compound of Formula (1a), (1b), or (1c) is at most 80% by mass relative to the amount of the resin, and the amount of the crosslinking agent is 5% by mass to 40% by mass relative to the amount of the resin.

A substrate-treating method includes applying a treatment agent directly or indirectly on one face of a substrate to form a substrate pattern collapse-inhibitory film. The substrate includes a pattern on the one face. The substrate pattern collapse-inhibitory film is removed by dry etching after forming the substrate pattern collapse-inhibitory film. The treatment agent includes a compound including an aromatic ring, and a hetero atom-containing group that bonds to the aromatic ring; and a solvent.

A substrate-treating method includes applying a treatment agent directly or indirectly on one face of a substrate to form a substrate pattern collapse-inhibitory film. The substrate includes a pattern on the one face. The substrate pattern collapse-inhibitory film is removed by dry etching after forming the substrate pattern collapse-inhibitory film. The treatment agent includes a compound including an aromatic ring, and a hetero atom-containing group that bonds to the aromatic ring; and a solvent.

A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin. The method is applied to a light extraction layer of an LED or a low-reflective glass of a solar cell.

A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin. The method is applied to a light extraction layer of an LED or a low-reflective glass of a solar cell.

The present invention relates to a polymer, composition, the forming of a sacrificial layer and a method for producing a semiconductor device comprising a step during which a pattern is made using a photoresist by the photolithography method.

The cyanate ester compound of the present invention is obtained by cyanating a modified naphthalene formaldehyde resin.

The cyanate ester compound of the present invention is obtained by cyanating a modified naphthalene formaldehyde resin.

A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.

A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.