Ruptureable, dual reagent mono-capsules are disclosed that have a core composition, which includes a first reagent, encapsulated within a polymer wall, and a shell connected to an exterior surface of the polymer wall by a surfactant. The shell is made from a second reagent that is chemically bonded to the surfactant by a chemical electrostatic interaction. Upon rupture of the polymer wall of the mono-capsule, the first reagent and the second reagent chemically react with one another to form a reaction product.

Ruptureable, dual reagent mono-capsules are disclosed that have a core composition, which includes a first reagent, encapsulated within a polymer wall, and a shell connected to an exterior surface of the polymer wall by a surfactant. The shell is made from a second reagent that is chemically bonded to the surfactant by a chemical electrostatic interaction. Upon rupture of the polymer wall of the mono-capsule, the first reagent and the second reagent chemically react with one another to form a reaction product.

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

Disclosed are curable coating compositions, and methods of cathodic corrosion protection using the compositions. For example, a curable coating composition comprising a mixed salt of magnesium thiodialkanoate, and a method for applying the coating composition, which when applied onto a steel or other ferrous substrate provides an anticorrosive coating, effective for improving resistance to cathodic disbondment.

The cyanate ester compound of the present invention is obtained by cyanating a modified naphthalene formaldehyde resin.

The cyanate ester compound of the present invention is obtained by cyanating a modified naphthalene formaldehyde resin.

A resist underlayer film-forming composition has high solubility in a solvent used at a lithography process for exhibiting good coating film forming properties and able to decrease a sublime generated during formation of a film. A resist underlayer film-forming composition having a novolac resin having a structure group (C) obtained by a reaction of an aromatic ring structure of an aromatic ring-containing compound (A) with a vinyl group of an aromatic vinyl compound (B). The aromatic vinyl compound (B) is represented by Formula (1), and is specifically styrene, 2-vinylnaphthalene, 4-tert-butylstyrene, or 4-tert-butoxystyrene. ##STR00001##
The structure group (C) is represented by Formula (2). ##STR00002##
The aromatic ring-containing compound (A) is an aromatic amine compound or a phenolic hydroxy group-containing compound. The novolac resin is a resin produced by a reaction of the aromatic amine compound or the phenolic hydroxy group-containing compound with aldehyde or ketone.

A resist underlayer film-forming composition has high solubility in a solvent used at a lithography process for exhibiting good coating film forming properties and able to decrease a sublime generated during formation of a film. A resist underlayer film-forming composition having a novolac resin having a structure group (C) obtained by a reaction of an aromatic ring structure of an aromatic ring-containing compound (A) with a vinyl group of an aromatic vinyl compound (B). The aromatic vinyl compound (B) is represented by Formula (1), and is specifically styrene, 2-vinylnaphthalene, 4-tert-butylstyrene, or 4-tert-butoxystyrene. ##STR00001##
The structure group (C) is represented by Formula (2). ##STR00002##
The aromatic ring-containing compound (A) is an aromatic amine compound or a phenolic hydroxy group-containing compound. The novolac resin is a resin produced by a reaction of the aromatic amine compound or the phenolic hydroxy group-containing compound with aldehyde or ketone.

Treated aldehyde-based resins containing one or more polyamines and methods for making and same. The treated aldehyde-based resin can be or include an aldehyde-based resin and a polyamine. The polyamine can be or include one or more aromatic polyamines, one or more poly(C.sub.2-C.sub.5 alkylene) polyamines, or a mixture thereof. The treated aldehyde-based resin can include about 0.05 wt % to about 10 wt % of the polyamine, based on a solids weight of the aldehyde-based resin.