The present invention provides a method for producing a novel amorphous silicon sacrifice film and an amorphous silicon forming composition capable of filling trenches having a high aspect ratio to form an amorphous silicon sacrifice film that is excellent in affinity with a substrate. A method for producing an amorphous silicon sacrifice film, comprising (i) polymerizing a cyclic polysilane comprising 5 or more silicon or a composition comprising the cyclic polysilane by light irradiation and/or heating to form a polymer having a polysilane skeleton, (ii) applying an amorphous silicon forming composition comprising said polymer having a polysilane skeleton, polysilazane and a solvent above a substrate to form a coating film, and (iii) heating the coating film in a non-oxidizing atmosphere.

The present invention provides a method for producing a novel amorphous silicon sacrifice film and an amorphous silicon forming composition capable of filling trenches having a high aspect ratio to form an amorphous silicon sacrifice film that is excellent in affinity with a substrate. A method for producing an amorphous silicon sacrifice film, comprising (i) polymerizing a cyclic polysilane comprising 5 or more silicon or a composition comprising the cyclic polysilane by light irradiation and/or heating to form a polymer having a polysilane skeleton, (ii) applying an amorphous silicon forming composition comprising said polymer having a polysilane skeleton, polysilazane and a solvent above a substrate to form a coating film, and (iii) heating the coating film in a non-oxidizing atmosphere.

The present disclosure relates to a vapor deposition compound which may be deposited as a thin film by vapor deposition, and specifically, to a silicon precursor which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and may be deposited at high rate, particularly by high-temperature ALD, and a method for fabricating a silicon-containing thin film using the same.

The present disclosure relates to a vapor deposition compound which may be deposited as a thin film by vapor deposition, and specifically, to a silicon precursor which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and may be deposited at high rate, particularly by high-temperature ALD, and a method for fabricating a silicon-containing thin film using the same.

The present application is directed to a multifunctional coating for operation at temperatures in excess of 150° C., and up to 300+° C. The multifunctional coating includes: a) one or more polysilazanes (i.e., a group of silicon-based polymers) that include inorganic and/or organic functionalized polysilazane; b) one or more secondary polymeric additives one or more secondary polymeric additives (e.g., siloxane compounds and/or polysilane compounds); c) one or more optional functionalized nanoparticles and/or fillers; d) one or more optional additive polymers that include: i) Polysulfones (PSF) such as Polyethersulfone (PES) and/or Polyphenylene sulfide (PPS); ii) Polyimides (PI); iii) Polybenzimidazole (PBI); iv) Polybenzoxazoles (PBO); and/or v) fluoropolymers including Polytetrafluoroethylene (PTFE), Polyvinylidene fluoride or polyvinylidene difluoride (PVDF), Fluorinated ethylene propylene (FEP), and/or hexafluoropropylene (HFP); e) one or more optional additives (e.g., biocide, foaming agent, surface tension agent, pigment, curing agent, surface friction reducing agent, stabilizers, flexibilizers, inhibitors, flow control agents, anti-oxidants, degassing agents, dyes, coupling agent, dispersing agents, catalyst and/or hardeners; etc.); and f) one or more optional solvents; and which multifunctional coating is formulated such that it can optionally i) function as a high-temperature insulator, ii) have high elongation and/or improved hydrolytic stability, iii) have extreme weather resistance, iv) have high chemical resistance, v) have high impact and/or abrasion resistance, and/or vi) have improved thermal cycling resistance.

The present application is directed to a multifunctional coating for operation at temperatures in excess of 150° C., and up to 300+° C. The multifunctional coating includes: a) one or more polysilazanes (i.e., a group of silicon-based polymers) that include inorganic and/or organic functionalized polysilazane; b) one or more secondary polymeric additives one or more secondary polymeric additives (e.g., siloxane compounds and/or polysilane compounds); c) one or more optional functionalized nanoparticles and/or fillers; d) one or more optional additive polymers that include: i) Polysulfones (PSF) such as Polyethersulfone (PES) and/or Polyphenylene sulfide (PPS); ii) Polyimides (PI); iii) Polybenzimidazole (PBI); iv) Polybenzoxazoles (PBO); and/or v) fluoropolymers including Polytetrafluoroethylene (PTFE), Polyvinylidene fluoride or polyvinylidene difluoride (PVDF), Fluorinated ethylene propylene (FEP), and/or hexafluoropropylene (HFP); e) one or more optional additives (e.g., biocide, foaming agent, surface tension agent, pigment, curing agent, surface friction reducing agent, stabilizers, flexibilizers, inhibitors, flow control agents, anti-oxidants, degassing agents, dyes, coupling agent, dispersing agents, catalyst and/or hardeners; etc.); and f) one or more optional solvents; and which multifunctional coating is formulated such that it can optionally i) function as a high-temperature insulator, ii) have high elongation and/or improved hydrolytic stability, iii) have extreme weather resistance, iv) have high chemical resistance, v) have high impact and/or abrasion resistance, and/or vi) have improved thermal cycling resistance.

Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

To provide a polysilazane and a siliceous film-forming composition which can suppress film thickness variation and voids even in the ozone containing atmosphere. [Means for Solution] A polysilazane comprising N—Si bonds, wherein the ratio (NA.sup.3/NA.sup.2) of the number of N atoms having 3 N—Si bonds (NA.sup.3) to the number of N atoms having 2 N—Si bonds (NA.sup.2) is 1.8 to 6.0.

To provide a polysilazane and a siliceous film-forming composition which can suppress film thickness variation and voids even in the ozone containing atmosphere. [Means for Solution] A polysilazane comprising N—Si bonds, wherein the ratio (NA.sup.3/NA.sup.2) of the number of N atoms having 3 N—Si bonds (NA.sup.3) to the number of N atoms having 2 N—Si bonds (NA.sup.2) is 1.8 to 6.0.