An inorganic polysilazane resin of the present invention has a Si/N ratio (i.e. a ratio of contained silicon atoms to contained nitrogen atoms) of 1.30 or more. The inorganic polysilazane resin having such a high Si content can be produced by, for example, a method in which an inorganic polysilazane compound containing both Si—NH and Si—Cl is heated to react NH with Cl, a method in which a silazane oligomer (polymer) that leaves no Si—Cl bond is synthesized and a dihalosilane is added to the synthesized silazane oligomer (polymer) to perform a thermal reaction, and the like. A siliceous film can be formed by, for example, applying a coating composition containing the inorganic polysilazane resin onto a base plate and then dried and the dried product is then oxidized by bringing the dried product into contact with water vapor or hydrogen peroxide vapor and water vapor under heated conditions.

A self-stratifying anticorrosive coating is described herein, including a zinc-rich epoxy, a curing agent chosen from the group consisting of amines, thiols, phenols, and carboxylic anhydrides, a binding agent chosen from the group consisting of aminoalkyl dialkoxysilane, dimethoxysilane, and aminoalkyl trialkoxysilane, a graphitic material, a solvent, a water scavenger, and a moisture-cured siloxane.

A self-stratifying anticorrosive coating is described herein, including a zinc-rich epoxy, a curing agent chosen from the group consisting of amines, thiols, phenols, and carboxylic anhydrides, a binding agent chosen from the group consisting of aminoalkyl dialkoxysilane, dimethoxysilane, and aminoalkyl trialkoxysilane, a graphitic material, a solvent, a water scavenger, and a moisture-cured siloxane.

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Low dielectric constant curable compositions include a first alkyl (meth)acrylate monomer with 12 or more carbon atoms, a crosslinking monomer, a copolymeric additive of a polycarbosilane or a polycarbosiloxane, and at least one initiator. The curable composition is solvent free and inkjet printable. Upon curing the curable composition forms a non-crystalline, optically transparent layer with a dielectric constant of less than or equal to 3.0 at 1 MegaHertz.

A layer by layer additive manufacturing system from liquid polymers for producing dense and defect free polymer-derived ceramic bodies of a three dimensional architecture.

A layer by layer additive manufacturing system from liquid polymers for producing dense and defect free polymer-derived ceramic bodies of a three dimensional architecture.

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of an at least one first compound comprising a C—C double or C—C triple bond.

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of an at least one first compound comprising a C—C double or C—C triple bond.