A chemical polishing bath for polishing a part made of aluminum or of aluminum alloy, or a portion of such a part, which bath includes an oxidizing agent capable of attacking the aluminum, chosen from nitric acid, hydrogen peroxide, permanganate, or a mixture thereof, at a concentration between 1.2 and 3.0 mol/L. The polishing bath also includes a fluoride complexing agent capable of forming a complex with the oxidized aluminum, at a concentration between 0.3 and 1.6 mol/L; a catalyst (Cu); and phosphoric acid at a concentration between 10.10 and 14.30 mol/L and also sulfuric acid at a concentration between 1.50 and 3.60 mol/L. The bath is particularly suitable for polishing parts resulting from additive manufacturing (3D printing).

A chemical polishing bath for polishing a part made of aluminum or of aluminum alloy, or a portion of such a part, which bath includes an oxidizing agent capable of attacking the aluminum, chosen from nitric acid, hydrogen peroxide, permanganate, or a mixture thereof, at a concentration between 1.2 and 3.0 mol/L. The polishing bath also includes a fluoride complexing agent capable of forming a complex with the oxidized aluminum, at a concentration between 0.3 and 1.6 mol/L; a catalyst (Cu); and phosphoric acid at a concentration between 10.10 and 14.30 mol/L and also sulfuric acid at a concentration between 1.50 and 3.60 mol/L. The bath is particularly suitable for polishing parts resulting from additive manufacturing (3D printing).

This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C.sub.4 to C.sub.40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.

This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C.sub.4 to C.sub.40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.

Described herein are compositions and methods for use in automotive care. In particular, the present disclosure is directed to compositions that provide an improved cure time and durability and methods of use thereof.

The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

Chemical mechanical polishing compositions include an abrasive, an additive, and water. The polishing compositions have a value of less than 800,000 for the relation: large particle counts/weight percent abrasive, when measured using a 0.2 μm bin size.

Chemical mechanical polishing compositions include an abrasive, an additive, and water. The polishing compositions have a value of less than 800,000 for the relation: large particle counts/weight percent abrasive, when measured using a 0.2 μm bin size.

A method for the wet-chemical polishing of molded zinc parts, the molded parts being brought in contact with an acid solution and said acid solution containing only sulfuric acid and phosphoric acid as the strong acids.