The present disclosure is a composition for a semiconductor process applied to a polishing process of a semiconductor wafer and, more specifically, to a semiconductor process involving a polishing process of a semiconductor wafer, wherein the composition includes abrasive particles, and the zeta potential of the abrasive particles is −50 mV to −10 mV at a pH of 6, and the zeta potential change rate represented by Equation 1 below is 6 mV to 30 mV: [Equation 1] Zeta potential change rate (mV/pH)=|(Z6−Z5)/(p6−p5)| where p6 denotes pH 6, p5 denotes pH 5, Z6 denotes a zeta potential at the pH 6, and Z5 denotes a zeta potential at the pH 5.

The present inventive subject matter provides an abrasive particle. The abrasive particle can include an elongated body that is defined between opposed first and second ends. Each end defines a substantially planar surface. An axis extends through the first and second ends, and each end has a respective first and second cross-sectional area. At least one of the first and second ends is oriented at an angle relative to the axis that is less than 90 degrees. The elongated body has a variable cross-sectional area centered along the axis. At least one cross-sectional area between the first and second ends represents a local minimum cross-sectional area.

A slurry containing abrasive grains, a liquid medium, and a salt of a compound represented by formula (1) below, in which the abrasive grains include first particles and second particles in contact with the first particles, the first particles contain cerium oxide, and the second particles contain a hydroxide of a tetravalent metal element. ##STR00001##
[In formula (1), R represents a hydroxyl group or a monovalent organic group].

High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule possessing negative and positive charges on the same molecule.

A polishing composition according to the present invention contains abrasive grains, a basic inorganic compound, an anionic water-soluble polymer, and a dispersing medium, in which a zeta potential of the abrasive grains is negative, an aspect ratio of the abrasive grains is 1.1 or less, in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 1.3, and the basic inorganic compound is an alkali metal salt.

Various embodiments disclosed relate to an incomplete shaped abrasive particle, articles containing the same, and methods of manufacture.

An abrasive article can include a body including agglomerated first abrasive particles and unagglomerated second abrasive particles contained in a bond material. The first abrasive particles can include chromium oxide. The second abrasive particles can be elongated. The bond material can include an inorganic material including a vitreous phase.

Provided are abrasive grains and a composition for chemical mechanical polishing which are for selectively polishing a silicon nitride film, and which are applicable not only to silicon oxide films but also to amorphous silicon films and polysilicon films. This method for manufacturing abrasive grains includes: a first step of heating a mixture which contains particles having a sulfanyl group (—SH) fixed to the surface thereof via covalent bonds, and which contains a compound having carbon-carbon unsaturated double bonds; and a second step, which is performed after the first step, of further adding a peroxide and carrying out heating.

A shaped ceramic abrasive particle, in particular on the basis of alpha-Al.sub.2O.sub.3, includes at least three faces, at least two faces of which form a common vertex on which at least one corner common to the three faces lies. The abrasive particle has at least one structural weakening element. The disclosure also relates to an abrasive article including the abrasive particles, and a method for producing the abrasive particles.

A shaped ceramic abrasive particle, in particular on the basis of alpha-Al.sub.2O.sub.3, includes at least three faces, at least two faces of which form a common vertex on which at least one corner common to the three faces lies. The abrasive particle has at least one structural weakening element. The disclosure also relates to an abrasive article including the abrasive particles, and a method for producing the abrasive particles.