C09K3/14

Slurry, method for producing polishing liquid, and polishing method

A slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, the first particles contain cerium oxide, the second particles contain a cerium compound, and in a case where a content of the abrasive grains is 2.0% by mass, a BET specific surface area of a solid phase obtained when the slurry is subjected to centrifugal separation for 30 minutes at a centrifugal acceleration of 1.1×10.sup.4 G is 24 m.sup.2/g or more.

Grinding method and grinding medium

A method for manufacturing microfibrillated cellulose, a particulate grinding medium suitable for use in said method, a material which wears rough, and a method for making said particulate grinding medium.

Polishing liquid, polishing liquid set, and polishing method
11572490 · 2023-02-07 · ·

A polishing liquid containing abrasive grains, a hydroxy acid, a polyol, and a liquid medium, in which a zeta potential of the abrasive grains is positive, and the hydroxy acid has one carboxyl group and one to three hydroxyl groups.

Polishing liquid, polishing liquid set, and polishing method
11572490 · 2023-02-07 · ·

A polishing liquid containing abrasive grains, a hydroxy acid, a polyol, and a liquid medium, in which a zeta potential of the abrasive grains is positive, and the hydroxy acid has one carboxyl group and one to three hydroxyl groups.

FIXED ABRASIVE ARTICLES AND METHODS OF FORMING SAME

An abrasive article with a bonded abrasive body having a ratio of diameter to thickness of at least 10:1. The abrasive article can include secondary abrasive particles contained in a bond material, wherein the secondary abrasive particles include agglomerated primary abrasive particles.

POLISHING METHOD, MACHINE DEVICE MANUFACTURING METHOD, AND MACHINE DEVICE
20230033337 · 2023-02-02 ·

One aspect of the present invention provides a polishing method including polishing a sliding part of a machine device by producing fullerene-aggregated particles by making the sliding part slide while a polishing-agent composition containing fullerenes and a solvent of the fullerenes is applied to the sliding part.

COMPOSITION FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING METHOD, AND METHOD FOR MANUFACTURING PARTICLES FOR CHEMICAL MECHANICAL POLISHING
20230034503 · 2023-02-02 · ·

Provided are a composition for chemical mechanical polishing and a chemical mechanical polishing method, which enable reduction in occurrence of surface defects in a polished surface and which enable high speed polishing of a tungsten film which is a wiring material. The composition for chemical mechanical polishing contains: (A) particles containing alumina and having a functional group represented by general formula (1); and (B) a liquid medium. (1): —SO.sub.3.sup.−M.sup.+ (In the formula, M.sup.+ represents a monovalent cation.)

SLURRY COMPOSITION FOR POLISHING ORGANIC FILM

The present invention relates to a slurry composition for polishing an organic film, and the slurry composition for polishing an organic film according to one embodiment of the present invention comprises: abrasive particles; a polishing control agent containing an organic acid, an inorganic acid, or both; an organic film polishing enhancer containing an amide compound or an amide polymer; an oxidizing agent; and a pH control agent.

Method for producing chain-like particle dispersion, and dispersion of chain-like particles

There is provided a production method of a chain silica particle dispersion. This production method includes a dispersion preparation step of hydrolyzing alkoxysilane in the presence of ammonia to prepare a silica particle dispersion, an ammonia removal step of removing the ammonia from the silica particle dispersion such that an ammonia amount relative to silica contained in the silica particle dispersion is 0.3% by mass or less, and a hydrothermal treatment step of hydrothermally treating the silica particle dispersion having a silica concentration of 12% by mass or more, from which the ammonia has been removed, at a temperature of not lower than 150° C. and lower than 250° C. An abrasive including such chain silica particles is high in polishing rate and excellent in polishing properties.