C09K11/08

Phosphor-containing film and backlight unit

Provided is an organic electroluminescent display device that further suppresses reflection of external light when viewed in an oblique direction; a phase difference film; and a circularly polarizing plate. This display device has an organic electroluminescent display panel, and a circularly polarizing plate arranged on the display panel, in which the circularly polarizing plate has a polarizer and a phase difference film, the phase difference film has, from a side of the polarizer, a negative A-plate, and a positive A-plate, the in-plane retardation of the negative A-plate at a wavelength of 550 nm is more than 50 nm and less than 90 nm, and the in-plane retardation of the positive A-plate at a wavelength of 550 nm is 100 to 200 nm, and the angle formed by the in-plane slow axis of the negative A-plate and the in-plane slow axis of the positive A-plate is 45°±10°.

Phosphor-containing film and backlight unit

Provided is an organic electroluminescent display device that further suppresses reflection of external light when viewed in an oblique direction; a phase difference film; and a circularly polarizing plate. This display device has an organic electroluminescent display panel, and a circularly polarizing plate arranged on the display panel, in which the circularly polarizing plate has a polarizer and a phase difference film, the phase difference film has, from a side of the polarizer, a negative A-plate, and a positive A-plate, the in-plane retardation of the negative A-plate at a wavelength of 550 nm is more than 50 nm and less than 90 nm, and the in-plane retardation of the positive A-plate at a wavelength of 550 nm is 100 to 200 nm, and the angle formed by the in-plane slow axis of the negative A-plate and the in-plane slow axis of the positive A-plate is 45°±10°.

DISPLAY DEVICE

A display device can include a substrate including a display area, a subpixel positioned on the substrate and positioned in the display area, and a black bank positioned on the substrate. The black bank can include a first opening corresponding to an emission area of the subpixel, and quantum dots that absorb light having a wavelength in a visible light region. As a result, the display device can reduce external light reflectance.

Process of manufacturing a conversion element, conversion element and light emitting device comprising the conversion element

In an embodiment a conversion element includes a first phase and a second phase, wherein the first phase comprises lutetium, aluminum, oxygen and a rare-earth element, wherein the second phase comprises Al.sub.2O.sub.3 single crystals, and wherein the conversion element comprises at least one groove.

Method for producing InP quantum dot precursor and method for producing InP-based quantum dot

The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot. ##STR00001##
(R is as defined in the specification.)

Method for producing InP quantum dot precursor and method for producing InP-based quantum dot

The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot. ##STR00001##
(R is as defined in the specification.)

Tunable neutron imaging scintillator

A scintillator-based imaging screen technology that is sensitive to neutral and charged particles is disclosed. These teachings improve the temporal and spatial resolution limitations of the screens currently used in static and dynamic neutron detection and imaging, neutron tomography, and other advanced neutron imaging equipment used to study materials, such as neutron reflectometers and diffractometers.

Tunable neutron imaging scintillator

A scintillator-based imaging screen technology that is sensitive to neutral and charged particles is disclosed. These teachings improve the temporal and spatial resolution limitations of the screens currently used in static and dynamic neutron detection and imaging, neutron tomography, and other advanced neutron imaging equipment used to study materials, such as neutron reflectometers and diffractometers.

LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF

A light emitting element according to an embodiment includes a first electrode, a second electrode overlapping the first electrode, an emission layer disposed between the first electrode and the second electrode, and an electron transport region disposed between the emission layer and the second electrode, wherein the electron transport region includes a thermal acid generator (TAG). A method of manufacturing a light emitting element is also provided.

Light emitting device

A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.