The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): ##STR00001##
3) at least one compound of structure (II): ##STR00002##
and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

Provided are a composition for semiconductor surface treatment capable of effectively diminishing or removing contaminations from a semiconductor surface and suppressing damage to a metal wiring material and the like when being used in treatments such as polishing and cleaning and a treatment method of a semiconductor surface using the composition. The composition for semiconductor surface treatment according to an embodiment of the disclosure contains (A) a compound represented by the following Formula (1) and (B) a compound represented by the following Formula (2):

R.sup.1L.sup.1R.sup.2 (1)

(in Formula (1), R.sup.1 represents a linear or branched alkyl group having 6 to 18 carbon atoms, R.sup.2 represents an organic group having 2 or more and 5 or less nitrogen atoms, and L.sup.1 represents a single bond or a divalent linking group)

##STR00001##

(in Formula (2), R.sup.11 represents an organic group having 1 to 12 carbon atoms).

The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water, wherein the pH of the composition is about 9 to about 12.5. The compositions of the invention are effectively utilized in the method of the invention and have been found to be capable of etching Cu and Ru at similar rates, i.e., >20 /min, while minimizing etch rates of dielectrics (<2 /min).

For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Various embodiments may provide a method of forming an energy conversion device. The method may include forming an electrolyte layer on the first surface of the semiconductor substrate. The method may also include forming a cavity on the second surface of the semiconductor substrate using a deep reactive ion etch. The method may further include enlarging said cavity by carrying out one or more wet etches so that the enlarged cavity is at least partially defined by a vertical arrangement comprising a first lateral cavity surface of the semiconductor substrate extending substantially along a first direction, and a second lateral cavity surface of the semiconductor substrate adjoining the first lateral cavity surface. The method may include forming a first electrode on a first surface of the electrolyte layer, and forming a second electrode on a second surface of the electrolyte layer.

Various embodiments may provide a method of forming an energy conversion device. The method may include forming an electrolyte layer on the first surface of the semiconductor substrate. The method may also include forming a cavity on the second surface of the semiconductor substrate using a deep reactive ion etch. The method may further include enlarging said cavity by carrying out one or more wet etches so that the enlarged cavity is at least partially defined by a vertical arrangement comprising a first lateral cavity surface of the semiconductor substrate extending substantially along a first direction, and a second lateral cavity surface of the semiconductor substrate adjoining the first lateral cavity surface. The method may include forming a first electrode on a first surface of the electrolyte layer, and forming a second electrode on a second surface of the electrolyte layer.

A separating fluid, method and use for separating multilayer systems, especially photovoltaic modules, for the purpose of recycling, which allow the separation of multilayer systems. Especially photovoltaic modules, in comparatively simple manner in terms of the processes used, in as environmentally friendly a manner as possible, at high recycling rates. For this purpose, the separating fluid is a nanoscale dispersion or a precursor thereof.

A separating fluid, method and use for separating multilayer systems, especially photovoltaic modules, for the purpose of recycling, which allow the separation of multilayer systems. Especially photovoltaic modules, in comparatively simple manner in terms of the processes used, in as environmentally friendly a manner as possible, at high recycling rates. For this purpose, the separating fluid is a nanoscale dispersion or a precursor thereof.

The present invention is in the field of chemical cleaning and surface treatments for a stainless steel substrate. In particular, the present invention provides a method, kit and use of specific solutions for removing and preferably preventing the formation of rouging (e.g. class I, II and/or III) on a stainless steel substrate, which may be used as processing station or production unit.