The present invention relates to a process for metallizing electrically nonconductive plastic surfaces of articles using the etching solution. The etching solution is based on a stabilized acidic permanganate solution. After the treatment with the etching solution, the articles can be metallized.

A method for improving the properties of resistance to laser flux of an optical component, comprising a step consisting in bringing the component into contact with an aqueous solution comprising at least one hydroxide of an alkaline metal or an alkaline earth metal in a quantity of between 5 and 30 mass % and having a temperature T of between 50 and 100 C.

A method for improving the properties of resistance to laser flux of an optical component, comprising a step consisting in bringing the component into contact with an aqueous solution comprising at least one hydroxide of an alkaline metal or an alkaline earth metal in a quantity of between 5 and 30 mass % and having a temperature T of between 50 and 100 C.

Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45 angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.

A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45 angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.

An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.

An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.

An alkaline etching solution comprising a hydroxide salt (e.g., an alkali metal hydroxide, an ammonium hydroxide, or a combination thereof), a polyol having at least three hydroxyl (OH) groups, and water. Also provided is a method of producing a semiconductor device by obtaining a semiconductor substrate having masked and unmasked surfaces; exposing the semiconductor substrate having the masked and unmasked surfaces to an alkaline etching solution, such that the unmasked surfaces of the substrate are anisotropically etched, wherein the alkaline etching solution comprises: a hydroxide salt; a polyol having at least three hydroxyl (OH) groups; and water; and performing additional processing to produce the semiconductor device.